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Direct observation of the strength of plasmon-longitudinal optical phonon interaction in n-type GaAs
Date
2006-07-31
Author
Altan, Hakan
Xin, X.
Matten, D.
Alfano, R. R.
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The screening of longitudinal optical phonons by plasmons is investigated by time-resolved visible pump-mid-infrared probe transmission measurements in a series of light to highly doped n-type GaAs wafers. The reduced relaxation of photogenerated carriers is strongly correlated to the coupling between longitudinal optical phonons and background plasmons as suggested by the variation of the phonon strength over the doping range. The critical plasmon density at which the optical phonons were effectively screened, thereby reducing the carrier relaxation, was determined to be N-c similar to 1x10(18) cm(-3). (c) 2006 American Institute of Physics.
Subject Keywords
Physics and Astronomy (miscellaneous)
URI
https://hdl.handle.net/11511/35884
Journal
APPLIED PHYSICS LETTERS
DOI
https://doi.org/10.1063/1.2236300
Collections
Department of Physics, Article