Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

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2003-05-19
BROOK, ALEX J
BENDİNG, SJ
PINTO, JONATHAN
Oral, Ahmet
RİTCHİE, DAVİD
BEERE, H
HENİNİ, M
SPRİNGTHORPE, A
We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.

Citation Formats
A. J. BROOK et al., “Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy,” APPLIED PHYSICS LETTERS, vol. 82, no. 20, pp. 3538–3540, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34882.