Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425 K Range Using Novel Quartz Tuning Fork AFM Feedback

Download

index.pdf

Date

2008-11-01

Author

Akram, R.
Dede, A.
Oral, Ahmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

232
views

0
downloads

In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), which are unstable due to their narrower bandgap and physical degradation at high temperatures. GaN/AlGaN micro Hall probes were produced using optical lithography and reactive ion etching. The active area, Hall coefficient, carrier concentration, and series resistance of the Hall sensors were similar to 1 x 1 mu m, 10 m Omega/G at 4.2 K, 6.3 x 10(12) cm(-2) and 12 k Omega at room temperature and 7 m Omega/G, 8.9 x 10(12) cm(-2) and 24 k Omega at 400 K, respectively. A novel method of AFM feedback using QTF has been adopted.. This method provides an advantage over scanning tunneling-guided feedback, which limits the operation of SHPM the conductive samples and failure of feedback due to high leakage currents at high temperatures. Simultaneous scans of magnetic and topographic data at various pressures (from atmospheric pressure to high vacuum) from 4. to 425K will be presented for different samples to illustrate the capability of GaN/AlGaN Hall sensors in VT-SHPM.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/36541

Journal

IEEE TRANSACTIONS ON MAGNETICS

DOI

https://doi.org/10.1109/tmag.2008.2001622

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors Li, Flora M.; Hsieh, Gen-Wen; Dalal, Sharvari; Newton, Marcus C.; Stott, James E.; Hiralal, Pritesh; Nathan, Arokia; Warburton, Paul A.; Ünalan, Hüsnü Emrah; Beecher, Paul; Flewitt, Andrew J.; Robinson, Ian; Amaratunga, Gehan; Milne, William I. (Institute of Electrical and Electronics Engineers (IEEE), 2008-11-01) This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods ...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01) The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Phonon dispersions and elastic constants of disordered Pd-Ni alloys Kart, SO; Tomak, Mehmet; Cagin, T (Elsevier BV, 2005-01-31) Phonon frequencies of Pd-Ni alloys are calculated by molecular dynamics (MD) simulation. Lattice dynamical properties computed from Sutton-Chen (SC) and quantum Sutton-Chen (Q-SC) potentials as a function of temperature are compared with each other. We present all interatomic force constants up to the 8th nearest-neighbor shell obtained by using the calculated potential. Elastic constants evaluated by two methods are consistent with each other. The transferability of the potential is also tested. The result...
RC Performance Evaluation of Interconnect Architecture Options Beyond the 10-nm Logic Node Kıncal, Serkan; Abraham, Mathew C.; Schuegraf, Klaus (Institute of Electrical and Electronics Engineers (IEEE), 2014-06-01) This paper summarizes the findings of an RC performance modeling approach for evaluating various material and architecture options by which interconnect wires are incorporated onto integrated circuits. For the present dual-damascene structure, the grain boundary and surface scattering modes are identified as the top contributors to resistance degradation, along with the cross-sectional area consumed by the liner/barrier layers. Self-forming barriers, a technology that provides direct Cu-insulator interfaces...
Investigation of structural, electronic, magnetic and lattice dynamical properties for XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds Surucu, Gokhan; IŞIK, MEHMET; CANDAN, ABDULLAH; Wang, Xiaotian; Güllü, Hasan Hüseyin (Elsevier BV, 2020-06-15) Structural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase ...

Citation Formats

R. Akram, A. Dede, and A. Oral, “Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425 K Range Using Novel Quartz Tuning Fork AFM Feedback,” IEEE TRANSACTIONS ON MAGNETICS, pp. 3255–3260, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36541.