Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425 K Range Using Novel Quartz Tuning Fork AFM Feedback
Download
index.pdf
Date
2008-11-01
Author
Akram, R.
Dede, A.
Oral, Ahmet
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
229
views
0
downloads
Cite This
In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), which are unstable due to their narrower bandgap and physical degradation at high temperatures. GaN/AlGaN micro Hall probes were produced using optical lithography and reactive ion etching. The active area, Hall coefficient, carrier concentration, and series resistance of the Hall sensors were similar to 1 x 1 mu m, 10 m Omega/G at 4.2 K, 6.3 x 10(12) cm(-2) and 12 k Omega at room temperature and 7 m Omega/G, 8.9 x 10(12) cm(-2) and 24 k Omega at 400 K, respectively. A novel method of AFM feedback using QTF has been adopted.. This method provides an advantage over scanning tunneling-guided feedback, which limits the operation of SHPM the conductive samples and failure of feedback due to high leakage currents at high temperatures. Simultaneous scans of magnetic and topographic data at various pressures (from atmospheric pressure to high vacuum) from 4. to 425K will be presented for different samples to illustrate the capability of GaN/AlGaN Hall sensors in VT-SHPM.
Subject Keywords
Electrical and Electronic Engineering
,
Electronic, Optical and Magnetic Materials
URI
https://hdl.handle.net/11511/36541
Journal
IEEE TRANSACTIONS ON MAGNETICS
DOI
https://doi.org/10.1109/tmag.2008.2001622
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors
Li, Flora M.; Hsieh, Gen-Wen; Dalal, Sharvari; Newton, Marcus C.; Stott, James E.; Hiralal, Pritesh; Nathan, Arokia; Warburton, Paul A.; Ünalan, Hüsnü Emrah; Beecher, Paul; Flewitt, Andrew J.; Robinson, Ian; Amaratunga, Gehan; Milne, William I. (Institute of Electrical and Electronics Engineers (IEEE), 2008-11-01)
This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods ...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01)
The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Phonon dispersions and elastic constants of disordered Pd-Ni alloys
Kart, SO; Tomak, Mehmet; Cagin, T (Elsevier BV, 2005-01-31)
Phonon frequencies of Pd-Ni alloys are calculated by molecular dynamics (MD) simulation. Lattice dynamical properties computed from Sutton-Chen (SC) and quantum Sutton-Chen (Q-SC) potentials as a function of temperature are compared with each other. We present all interatomic force constants up to the 8th nearest-neighbor shell obtained by using the calculated potential. Elastic constants evaluated by two methods are consistent with each other. The transferability of the potential is also tested. The result...
RC Performance Evaluation of Interconnect Architecture Options Beyond the 10-nm Logic Node
Kıncal, Serkan; Abraham, Mathew C.; Schuegraf, Klaus (Institute of Electrical and Electronics Engineers (IEEE), 2014-06-01)
This paper summarizes the findings of an RC performance modeling approach for evaluating various material and architecture options by which interconnect wires are incorporated onto integrated circuits. For the present dual-damascene structure, the grain boundary and surface scattering modes are identified as the top contributors to resistance degradation, along with the cross-sectional area consumed by the liner/barrier layers. Self-forming barriers, a technology that provides direct Cu-insulator interfaces...
Investigation of structural, electronic, magnetic and lattice dynamical properties for XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds
Surucu, Gokhan; IŞIK, MEHMET; CANDAN, ABDULLAH; Wang, Xiaotian; Güllü, Hasan Hüseyin (Elsevier BV, 2020-06-15)
Structural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase ...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
R. Akram, A. Dede, and A. Oral, “Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425 K Range Using Novel Quartz Tuning Fork AFM Feedback,”
IEEE TRANSACTIONS ON MAGNETICS
, pp. 3255–3260, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36541.