Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

Li, Flora M.
Hsieh, Gen-Wen
Dalal, Sharvari
Newton, Marcus C.
Stott, James E.
Hiralal, Pritesh
Nathan, Arokia
Warburton, Paul A.
Ünalan, Hüsnü Emrah
Beecher, Paul
Flewitt, Andrew J.
Robinson, Ian
Amaratunga, Gehan
Milne, William I.
This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.


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Phonon frequencies of Pd-Ni alloys are calculated by molecular dynamics (MD) simulation. Lattice dynamical properties computed from Sutton-Chen (SC) and quantum Sutton-Chen (Q-SC) potentials as a function of temperature are compared with each other. We present all interatomic force constants up to the 8th nearest-neighbor shell obtained by using the calculated potential. Elastic constants evaluated by two methods are consistent with each other. The transferability of the potential is also tested. The result...
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In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), whi...
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The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
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In this paper an artificial neural network (ANN) has been developed to compute the magnetization of the pure and La-doped barium ferrite powders synthesized in ammonium nitrate melt. The input parameters were: the Fe/Ba ratio, La content, sintering temperature, HCl washing and applied magnetic field. A total of 8284 input data set from currently measured 35 different samples with different Fe/Ba ratios, La contents and washed or not washed in HCl were available. These data were used in the training set for ...
Optical properties of (Ga2Se3)(0.)(75) - (Ga2S3)(0.)(25) single crystals by spectroscopic ellipsometry
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Structural and optical properties of 75 mol % Ga2Se3 - 25 mol % Ga2S3 system of single crystals were investigated by experimental techniques of x-ray diffraction (XRD), energy dispersive spectroscopy, Raman spectroscopy and ellipsometry. XRD pattern indicated that the studied compound has crystalline nature with cubic structure. Vibrational modes in the crystal were revealed using Raman spectroscopy experiments in the 90-450 cm(-1) frequency range and nine modes were observed in the spectrum. Ellipsometry m...
Citation Formats
F. M. Li et al., “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 3001–3011, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39402.