Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

2008-11-01
Li, Flora M.
Hsieh, Gen-Wen
Dalal, Sharvari
Newton, Marcus C.
Stott, James E.
Hiralal, Pritesh
Nathan, Arokia
Warburton, Paul A.
Ünalan, Hüsnü Emrah
Beecher, Paul
Flewitt, Andrew J.
Robinson, Ian
Amaratunga, Gehan
Milne, William I.
This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.

Citation Formats
F. M. Li et al. , “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, no. 11, pp. 3001–3011, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39402.