Low dark current diffusion limited planar type InGaAs photodetectors

m halit, dolaş
ateşal, okan
çalışkan, m deniz
Bek, Alpan
In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15µm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55µm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation & recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10oC – 60oC ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.


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Dolaş, Muhammet Halit; Bek, Alpan; Arslan, Yetkin; Department of Micro and Nanotechnology (2021-3-05)
This thesis aims to report novel designs to achieve lower dark current values for modified pin heterojunction InGaAs/InP SWIR photodiodes for both mesa and planar type production methodologies.Mesa type studies covernovel passivation methodology based on a fully depleted thin p-InP layer. Mesastructured detectors are targeted due to their competitive advantages for applications such as multicolor/hyperspectral imaging. Test detector pixels with different p...
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In this article, we propose a large bandwidth mode-order converter design by dielectric waveguides with equal lengths but different cross-sectional areas. The efficient conversion between even and odd modes is verified by inducing required phase difference between the equal length waveguides of different widths. Y-junctions are composed of both tapered mode splitter and combiner to connect mono-mode waveguide to multi-mode waveguide. The converted mode profiles at the output port show that the device operat...
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We report a large-format (640 x 512) voltage-tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mu m as the bias is increase...
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This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...
Citation Formats
d. m halit, o. ateşal, m. d. çalışkan, A. Bek, and E. ÖZBAY, “Low dark current diffusion limited planar type InGaAs photodetectors,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36965.