Low dark current diffusion limited planar type InGaAs photodetectors

m halit, dolaş
ateşal, okan
çalışkan, m deniz
Bek, Alpan
In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15µm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55µm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation & recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10oC – 60oC ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.


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Dolaş, Muhammet Halit; Bek, Alpan; Arslan, Yetkin; Department of Micro and Nanotechnology (2021-3-05)
This thesis aims to report novel designs to achieve lower dark current values for modified pin heterojunction InGaAs/InP SWIR photodiodes for both mesa and planar type production methodologies.Mesa type studies covernovel passivation methodology based on a fully depleted thin p-InP layer. Mesastructured detectors are targeted due to their competitive advantages for applications such as multicolor/hyperspectral imaging. Test detector pixels with different p...
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We present a low-frequency fast multipole method for the solution of three-dimensional electromagnetic problems involving small objects and their dense discretizations with respect to wavelength. The diagonalization of the Green's function is stabilized using a multiple-precision arithmetic (MPA) for accurate and efficient computations of subwavelength interactions. MPA provides a direct remedy for the low-frequency breakdown of the standard diagonalization based on plane waves, and it enables straightforwa...
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Oner, B. B.; ÜSTÜN, KADİR; Kurt, H.; Okyay, A. K.; Sayan, Gönül (The Optical Society, 2015-02-09)
In this article, we propose a large bandwidth mode-order converter design by dielectric waveguides with equal lengths but different cross-sectional areas. The efficient conversion between even and odd modes is verified by inducing required phase difference between the equal length waveguides of different widths. Y-junctions are composed of both tapered mode splitter and combiner to connect mono-mode waveguide to multi-mode waveguide. The converted mode profiles at the output port show that the device operat...
Large-format voltage-tunable dual-band quantum-well infrared photodetector focal plane array for third-generation thermal imagers
Eker, S. U.; Kaldirim, M.; Arslan, Y.; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2008-10-01)
We report a large-format (640 x 512) voltage-tunable quantum-well (QW) infrared photodetector focal plane array (FPA) for dual-band imaging in the mid- and long-wavelength infrared (MWIR and LWIR) bands. Voltage-tunable spectral response has been achieved through a series connection of eight-well MWIR AlGaAs-InGaAs and 16-well LWIR AlGaAs-GaAs QW stacks grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.8 to 8.4 mu m as the bias is increase...
Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors
Dolas, M. Halit; Kocaman, Serdar (2017-12-01)
We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different a...
Citation Formats
d. m halit, o. ateşal, m. d. çalışkan, A. Bek, and E. ÖZBAY, “Low dark current diffusion limited planar type InGaAs photodetectors,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36965.