Low dark current diffusion limited planar type InGaAs photodetectors

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Date

2019-09-09

Author

m halit, dolaş
ateşal, okan
çalışkan, m deniz
Bek, Alpan
ÖZBAY, EKMEL

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In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15µm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55µm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation & recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10oC – 60oC ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.

Subject Keywords

SWIR, InGaAs, Planar p-n diodes, Low dark current, Megapixel

URI

https://hdl.handle.net/11511/36965

DOI

https://doi.org/10.1117/12.2528666

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Department of Physics, Conference / Seminar

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Citation Formats

d. m halit, o. ateşal, m. d. çalışkan, A. Bek, and E. ÖZBAY, “Low dark current diffusion limited planar type InGaAs photodetectors,” 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36965.