Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors

2017-12-01
Dolas, M. Halit
Kocaman, Serdar
We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.
IEEE ELECTRON DEVICE LETTERS

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Citation Formats
M. H. Dolas and S. Kocaman, “Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors,” IEEE ELECTRON DEVICE LETTERS, pp. 1692–1695, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37379.