Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors

Date

2017-12-01

Author

Dolas, M. Halit
Kocaman, Serdar

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We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.

Subject Keywords

Fully depleted, SWIR, InP passivation, p-n diodes, In-device passivation, InGaAs, heterojunction

URI

https://hdl.handle.net/11511/37379

Journal

IEEE ELECTRON DEVICE LETTERS

DOI

https://doi.org/10.1109/led.2017.2763616

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

M. H. Dolas and S. Kocaman, “Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors,” IEEE ELECTRON DEVICE LETTERS, pp. 1692–1695, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37379.