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Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors
Date
2017-12-01
Author
Dolas, M. Halit
Kocaman, Serdar
Metadata
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Cite This
We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different areas resulted in a suppression of surface dark current by nearly three times.
Subject Keywords
Fully depleted
,
SWIR
,
InP passivation
,
p-n diodes
,
In-device passivation
,
InGaAs
,
heterojunction
URI
https://hdl.handle.net/11511/37379
Journal
IEEE ELECTRON DEVICE LETTERS
DOI
https://doi.org/10.1109/led.2017.2763616
Collections
Department of Electrical and Electronics Engineering, Article
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M. H. Dolas and S. Kocaman, “Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors,”
IEEE ELECTRON DEVICE LETTERS
, pp. 1692–1695, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37379.