Determination of optical parameters of Ga0.75In0.25Se layered crystals

Date

2012-05-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı

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The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zero value of the band gap (Egi(0) = 2.01 eV) were reported. The wavelength dependence of the refractive index was analyzed using Wemple and DiDomenico, Sellmeier and Cauchy models to find the oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index values. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Subject Keywords

Semiconductors, Chalcogenides, Optical properties

URI

https://hdl.handle.net/11511/37573

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.201100643

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK and N. Hasanlı, “Determination of optical parameters of Ga0.75In0.25Se layered crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 530–534, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37573.