Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals

Date

2011-01-01

Author

Hasanlı, Nızamı

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The optical properties of TlGaS2, TlGaSe2, and TlInS2 crystals have been investigated through the transmission and reflection measurements at room temperature in the wavelength range of 400-1100 nm. These measurements allowed determination of spectral dependence of the refractive index for all crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: the oscillator energies, the dispersion energies, and the zero-frequency dielectric constants and refractive indices were determined.

Subject Keywords

Semiconductors, Refractive index, Optical properties

URI

https://hdl.handle.net/11511/53542

Journal

Journal of Optoelectronics and Advanced Materials

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Department of Physics, Article

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Citation Formats

N. Hasanlı, “Refractive index and oscillator parameters in TlGaS2, TlGaSe2 and TlInS2 layered crystals,” Journal of Optoelectronics and Advanced Materials, pp. 49–52, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53542.