Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

Hasanlı, Nızamı
Gurlu, O
Aydinli, A
Yilmaz, I
The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model.


Composition-tuned refractive index and oscillator parameters in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1)
Hasanlı, Nızamı (Elsevier BV, 2010-09-01)
The optical properties of TlGaxIn1-xS2 mixed crystals have been studied through transmission and reflection measurements in the wavelength range 400-1100 nm. These measurements allowed determination of the spectral dependence of the refractive index for all compositions of the mixed crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependences of the refractive index dispersion parameters (oscillator e...
Infrared photoluminescence from TlGaS2 layered single crystals
Yuksek, NS; Hasanlı, Nızamı; Aydinli, A; Ozkan, H; Acikgoz, M (Wiley, 2004-09-01)
Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K, We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing tempera...
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals
Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01)
Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...
Energy band gap and oscillator parameters of Ga4Se3S single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (Elsevier BV, 2007-06-01)
The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 a...
Anisotropic electrical and dispersive optical parameters in InS layered crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-02-01)
The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range ...
Citation Formats
N. Hasanlı, O. Gurlu, A. Aydinli, and I. Yilmaz, “Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity,” SOLID STATE COMMUNICATIONS, pp. 525–530, 1998, Accessed: 00, 2020. [Online]. Available: