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Energy band gap and oscillator parameters of Ga4Se3S single crystals
Date
2007-06-01
Author
Qasrawi, A. F.
Hasanlı, Nızamı
Metadata
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The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively.
Subject Keywords
Materials Chemistry
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/37766
Journal
SOLID STATE COMMUNICATIONS
DOI
https://doi.org/10.1016/j.ssc.2007.04.008
Collections
Department of Physics, Article
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A. F. Qasrawi and N. Hasanlı, “Energy band gap and oscillator parameters of Ga4Se3S single crystals,”
SOLID STATE COMMUNICATIONS
, pp. 566–568, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37766.