Energy band gap and oscillator parameters of Ga4Se3S single crystals

Date

2007-06-01

Author

Qasrawi, A. F.
Hasanlı, Nızamı

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The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively.

Subject Keywords

Materials Chemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37766

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2007.04.008

Collections

Department of Physics, Article

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Citation Formats

A. F. Qasrawi and N. Hasanlı, “Energy band gap and oscillator parameters of Ga4Se3S single crystals,” SOLID STATE COMMUNICATIONS, pp. 566–568, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37766.