Energy band gap and oscillator parameters of Ga4Se3S single crystals

Date

2007-06-01

Author

Qasrawi, A. F.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

248
views

0
downloads

The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively.

Subject Keywords

Materials Chemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37766

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2007.04.008

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Composition-tuned refractive index and oscillator parameters in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) Hasanlı, Nızamı (Elsevier BV, 2010-09-01) The optical properties of TlGaxIn1-xS2 mixed crystals have been studied through transmission and reflection measurements in the wavelength range 400-1100 nm. These measurements allowed determination of the spectral dependence of the refractive index for all compositions of the mixed crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependences of the refractive index dispersion parameters (oscillator e...
Anisotropic electrical and dispersive optical parameters in InS layered crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-02-01) The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range ...
Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals Qasrawi, A. F.; Hasanlı, Nızamı (Wiley, 2007-09-01) The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix Wang, Jiwei; Righini, Marcofabio; Gnoli, Andrea; Foss, Steinar; Finstad, Terje; Serincan, Ugur; Turan, Raşit (Elsevier BV, 2008-09-01) Temperature and size dependence of photoluminescence (PL) of nano-silicon embedded in SiO2 matrix samples were studied. In these measurements, four samples with deferent implantation dose showed their similar tendency. Their nano-structure was investigated by high resolution electron microscopy (HREM) and selected area diffraction (SAD) which confirmed that only those prepared with the higher Si implantation dose formed crystal nano-silicon. The further analysis of the dependence of thermal activation energ...

Citation Formats

A. F. Qasrawi and N. Hasanlı, “Energy band gap and oscillator parameters of Ga4Se3S single crystals,” SOLID STATE COMMUNICATIONS, pp. 566–568, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37766.