MoOx/Ag/MoOx multilayers as hole transport transparent conductive electrodes for n-type crystalline silicon solar cells

Date

2020-03-25

Author

Akdemir, Ozan
Borra, Mona Zolfaghari
Nasser, Hisham
Turan, Raşit
Bek, Alpan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

22
views

0
downloads

Cite This

Substitution of highly doped layers with conventional transparent conductive electrodes as carrier collecting and selective contacts in conventional crystalline silicon (c-Si) solar cell configurations is crucial in increasing affordability of solar cells by lowering material costs. In this study, oxide/metal/oxide (OMO) multilayers featuring molybdenum oxide (MoOx) and silver (Ag) thin films are developed by thermal evaporation technique, as dopant-free hole transport transparent conductive electrodes (HTTCEs) for n-type c-Si solar cells. Semidopant-free asymmetric heterocontact (semi-DASH) solar cells on n-type c-Si utilizing OMO multilayers are fabricated. The effect of outer MoOx layer thickness and Ag deposition rate on the photovoltaic characteristics of the fabricated semi-DASH solar cells are investigated. A comparison of front side pyramid textured and flat surface solar cells is performed to optimize the optical and electrical properties. Highest efficiency of 9.3% +/- 0.2% is achieved in a pyramid textured semi-DASH c-Si solar cell with 15/10/30 nm of HTTCE structure.

Subject Keywords

Fuel Technology, Renewable Energy, Sustainability and the Environment, Energy Engineering and Power Technology, Nuclear Energy and Engineering

URI

https://hdl.handle.net/11511/37918

Collections

Department of Physics, Article