Resistance non-uniformity correction method using bias heating for resistance type uncooled microbolometer FPAs

Tepegoz, Murat
Akın, Tayfun
This paper proposes a new resistance non-uniformity correction method for microbolometer-type uncooled thermal detector focal plane arrays (FPAs) that suffer from pixel-to-pixel resistance variation, which is conventionally corrected by applying a specific bias voltage to each detector by the use on-chip DACs. The proposed method uses the heating of the detector with electrical bias, where the detector is heated-up for a pre-determined period of time before the read-out phase. The proposed method uses only a heat-up signal source and simple digital blocks for each column, eliminating the need for DACs that occupy large area, contribute to the noise floor of the system, and dissipate extra power. The proposed method provides a detector current resolution of 14.5 nA with 9-bit digital data, which corresponds to the resolution of 12-bit DAC used in conventional methods.


Dynamic resistance nonuniformity compensation circuit for uncooled microbolometer detector arrays
Yildirim, Omer Ozgur; Akın, Tayfun (2006-04-21)
This paper presents a new approach for compensating resistance nonuniformity of uncooled microbolometers by adjusting the bias currents of both detector and reference pixels. Contrary to conventional nonuniformity compensation circuits, this approach eliminates the need for digital-to-analog converters (DACs), which usually occupy a large area, dissipate high power, and require complicated external circuitry with high frequency data transfer to the microbolometer chip. The proposed circuit uses a feedback s...
Development of high performance uncooled infrared detector materials
Kebapçı, Başak; Akın, Tayfun; Turan, Raşit; Department of Micro and Nanotechnology (2011)
This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in...
A CMOS n-well microbolometer FPA with temperature coefficient enhancement circuitry
Eminoglu, S; Tezcan, DS; Akın, Tayfun (2001-04-20)
This paper reports the development of a low-cost CMOS microbolometer focal plane array with a new temperature coefficient enhancement readout circuit. We have recently reported an uncooled microbolometer detector that uses the CMOS n-well layer as the active material, where the suspended and thermally isolated n-well structure is obtained by silicon bulk micromachining of fabricated CMOS dies. In addition, we have successfully fabricated a 16x16 n-well microbolometer FPA. Although n-well is single crystal s...
A Two-Stage Digital-to-Analog Converter for Bias Correction in Uncooled Microbolometer Arrays
Toprak, Alperen; Tepegoz, Murat; Akın, Tayfun (2011-04-29)
This paper introduces a detector biasing scheme proper for resistive microbolometer type uncooled thermal detector focal plane arrays (FPAs). The proposed scheme utilizes a 2-stage digital-to-analog converter (DAC) architecture where the first DAC stage generates the voltage interval that covers the bias voltage range of the overall FPA, while the second stage generates the high resolution analog voltages that are used to apply pixel-specific bias voltages. The second DAC stage output includes a resistive l...
A current mirroring integration based readout circuit for high performance infrared FPA applications
Külah, Haluk; Akın, Tayfun (2003-04-01)
This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution infrared focal plane array (FPA) applications. The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetector diode, while mirroring the diode current to an integration capacitor. The integration capacitor can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitance for larger charge storage capac...
Citation Formats
M. Tepegoz and T. Akın, “Resistance non-uniformity correction method using bias heating for resistance type uncooled microbolometer FPAs,” 2007, vol. 6542, Accessed: 00, 2020. [Online]. Available: