Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction

Date

2001-04-01

Author

Ouacha, H
Nur, O
Fu, Y
Willander, M
Ouacha, A
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

65
views

0
downloads

The noise properties of Pt/p-Si1-xGex and PtSi/p-Si1-xGex (x = 0.14) Schottky contacts have been studied. The silicide layer PtSi was formed by thermal reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si1-xGex layer. The noise measurements were performed at temperature T = 77 K over the frequency range 10-10(4) Hz, Higher noise level was observed in the annealed diode Pt/p-Si1-xGex. In both diodes, the noise was found to exhibit l/f behaviour and was attributed to fluctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and the interface state density Ni, by three orders of magnitude when the silicide is formed by the CS process.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38250

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/16/4/312

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (Elsevier BV, 2019-10-01) In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined ...
Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements Isik, M.; Guler, I.; Hasanlı, Nızamı (Elsevier BV, 2019-09-01) Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of t...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...

Citation Formats

H. Ouacha, O. Nur, Y. Fu, M. Willander, A. Ouacha, and R. Turan, “Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 255–259, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38250.