Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction

Date

2001-04-01

Author

Ouacha, H
Nur, O
Fu, Y
Willander, M
Ouacha, A
Turan, Raşit

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The noise properties of Pt/p-Si1-xGex and PtSi/p-Si1-xGex (x = 0.14) Schottky contacts have been studied. The silicide layer PtSi was formed by thermal reaction (TR) of Pt with a silicon substrate and by co-sputtering (CS) of Pt and Si onto the strained Si1-xGex layer. The noise measurements were performed at temperature T = 77 K over the frequency range 10-10(4) Hz, Higher noise level was observed in the annealed diode Pt/p-Si1-xGex. In both diodes, the noise was found to exhibit l/f behaviour and was attributed to fluctuations of the generation-recombination current at the interface states. The results reveal significant reductions in the total noise by 70%, and the interface state density Ni, by three orders of magnitude when the silicide is formed by the CS process.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38250

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/16/4/312

Collections

Department of Physics, Article

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Citation Formats

H. Ouacha, O. Nur, Y. Fu, M. Willander, A. Ouacha, and R. Turan, “Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 255–259, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38250.