Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices

Date

2007-12-01

Author

Yilmaz, K.
Parlak, Mehmet
Ercelebi, C.

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In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost ohmic non-rectifying behaviors for all samples. The ideality factor and barrier height values with the Ag contact were found to be 2 and 0.7 eV, respectively.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37956

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/22/12/004

Collections

Department of Physics, Article

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Citation Formats

K. Yilmaz, M. Parlak, and C. Ercelebi, “Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1268–1271, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37956.