Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices

Yilmaz, K.
Parlak, Mehmet
Ercelebi, C.
In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost ohmic non-rectifying behaviors for all samples. The ideality factor and barrier height values with the Ag contact were found to be 2 and 0.7 eV, respectively.


Investigation of structural, electronic, magnetic and lattice dynamical properties for XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds
Surucu, Gokhan; IŞIK, MEHMET; CANDAN, ABDULLAH; Wang, Xiaotian; Güllü, Hasan Hüseyin (Elsevier BV, 2020-06-15)
Structural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Surucu, O. Bayrakli; Güllü, Hasan Hüseyin; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M. (Elsevier BV, 2019-10-01)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined ...
Theoretical investigation of intersubband nonlinear optical rectification in AlxlGa1-xlAs/GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells
Karabulut, Ibrahim; Atav, Uelfet; Safak, Haluk; Tomak, Mehmet (Wiley, 2007-09-01)
In this study, a theoretical investigation of intersubband nonlinear optical rectification in Alx1Ga1-x1As/ GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells is presented. The electronic states in the asymmetric rectangular quantum well are described within the framework of the envelope function approach including the effects of band nonparabolicity and the effective mass mismatch. The nonlinear optical rectification is calculated using the density matrix formalism. It is found that the nonlinear optic...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy
Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01)
The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-08-01)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Citation Formats
K. Yilmaz, M. Parlak, and C. Ercelebi, “Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1268–1271, 2007, Accessed: 00, 2020. [Online]. Available: