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Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices
Date
2007-12-01
Author
Yilmaz, K.
Parlak, Mehmet
Ercelebi, C.
Metadata
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In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost ohmic non-rectifying behaviors for all samples. The ideality factor and barrier height values with the Ag contact were found to be 2 and 0.7 eV, respectively.
Subject Keywords
Electrical and Electronic Engineering
,
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/37956
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
DOI
https://doi.org/10.1088/0268-1242/22/12/004
Collections
Department of Physics, Article
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K. Yilmaz, M. Parlak, and C. Ercelebi, “Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices,”
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
, pp. 1268–1271, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37956.