Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements

Date

2019-09-01

Author

Isik, M.
Guler, I.
Hasanlı, Nızamı

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Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.

Subject Keywords

Electrical and Electronic Engineering, General Computer Science, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/48487

Journal

OPTICAL MATERIALS

DOI

https://doi.org/10.1016/j.optmat.2019.109228

Collections

Department of Physics, Article

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Citation Formats

M. Isik, I. Guler, and N. Hasanlı, “Study of vibrational modes in (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals by Raman and infrared reflection measurements,” OPTICAL MATERIALS, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48487.