Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes

Date

2019-10-01

Author

Surucu, O. Bayrakli
Güllü, Hasan Hüseyin
Terlemezoglu, M.
Yildiz, D. E.
Parlak, M.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

350
views

0
downloads

In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/57076

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2019.06.024

Collections

Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article

Suggestions

OpenMETU
Core

Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2020-08-01) SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Investigation of structural, electronic, magnetic and lattice dynamical properties for XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds Surucu, Gokhan; IŞIK, MEHMET; CANDAN, ABDULLAH; Wang, Xiaotian; Güllü, Hasan Hüseyin (Elsevier BV, 2020-06-15) Structural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase ...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01) This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...

Citation Formats

O. B. Surucu, H. H. Güllü, M. Terlemezoglu, D. E. Yildiz, and M. Parlak, “Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes,” PHYSICA B-CONDENSED MATTER, pp. 246–253, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57076.