Infrared and Raman Spectra of Layer InSe Single Crystals

Date

1978-01-01

Author

Hasanlı, Nızamı
Tagirov, V.I.
Vinogradov, E.A.

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39097

Journal

physica status solidi (b)

DOI

https://doi.org/10.1002/pssb.2220890155

Collections

Department of Physics, Article

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Infrared spectra of the layer compound InS Hasanlı, Nızamı; Dzhavadov, B.M.; Tagirov, V.I.; Vinogradov, E.A. (Wiley, 1979-01-01)
Nonlinear intersubband optical absorption of Si delta-doped GaAs under an electric field Yildirim, Hasan; Tomak, Mehmet (Wiley, 2006-10-01) We study the nonlinear intersubband optical absorption of a single Si delta-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schrodinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed wit...
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Thermally stimulated currents in layered Ga4SeS3 semiconductor Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01) Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...

Citation Formats

N. Hasanlı, V. I. Tagirov, and E. A. Vinogradov, “Infrared and Raman Spectra of Layer InSe Single Crystals,” physica status solidi (b), pp. 0–0, 1978, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39097.