Thermally stimulated currents in layered Ga4SeS3 semiconductor

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2004-10-01

Author

Aytekin, S
Yuksek, NS
Goktepe, M
Hasanlı, Nızamı
Aydinli, A

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Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 x 10(-21), 7.0 x 10(-19) and 1.5 x 10(-13) cm(2) for the capture cross section, and 1.6 x 10(10), 6.5 x 10(10) and 1.2 x 10(11) cm(-3) for the concentration of the traps studied. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42896

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.200406854

Collections

Department of Physics, Article

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Citation Formats

S. Aytekin, N. Yuksek, M. Goktepe, N. Hasanlı, and A. Aydinli, “Thermally stimulated currents in layered Ga4SeS3 semiconductor,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 2980–2985, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42896.