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Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals

Systematic measurements by Raman scattering. of the frequency and line width of the zone-center optical modes in GaS0.25Se0.75 layered crystal over the temperature, range of 10-300 K are carried out. The analysis of-temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.