Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals

2002-12-01
Systematic measurements by Raman scattering. of the frequency and line width of the zone-center optical modes in GaS0.25Se0.75 layered crystal over the temperature, range of 10-300 K are carried out. The analysis of-temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.

Citation Formats
N. Hasanlı, “Temperature dependence of the first-order Raman phonon lines in GaS0.25Se0.75 layered crystals,” ACTA PHYSICA POLONICA A, vol. 102, no. 6, pp. 801–810, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39842.