Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals

Date

2011-03-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

215
views

0
downloads

Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and 2.9 x 10(-26) cm(2)) of the traps were estimated for peaks. A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/37841

Journal

ACTA PHYSICA POLONICA A

DOI

https://doi.org/10.12693/aphyspola.119.437

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally stimulated current measurements in as-grown TIGaSeS layered single crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-01) Charge carrier traps in as-grown TIGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TIGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have be...
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15) Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...
Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements YILDIRIM, TACETTİN; Hasanlı, Nızamı (Wiley, 2009-12-01) Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) f...
Optical properties of TlGa(SxSe1-x) 2 layered mixed crystals (0=x=1): Absorption edge and photoluminescence study at T=10 K Hasanlı, Nızamı (Springer Science and Business Media LLC, 2018-09-01) Transmittance measurements of layered mixed crystals were performed in the 1.80-2.80 eV photon energy range at . Band-gap energies of the studied crystals were estimated by means of the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The compositional dependence of direct band-gap energy at revealed that as sulphur (selenium) composition is increased (decreased) in the mixed crystals, the direct band-gap energy increases from 2.19 eV () to 2.67 eV (). Photolumines...
Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe2 Crystals QASRAWI, ATEF FAYEZ HASAN; Yaseen, T. R.; Eghbariy, B.; Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2012-07-01) Anisotropic space charge limited current density analysis and photovoltaic effect in TlGaTe2 single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficien...

Citation Formats

N. Hasanlı, “Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals,” ACTA PHYSICA POLONICA A, pp. 437–441, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37841.