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Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals
Date
2011-03-01
Author
Hasanlı, Nızamı
Metadata
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Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and 2.9 x 10(-26) cm(2)) of the traps were estimated for peaks. A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
Subject Keywords
General Physics and Astronomy
URI
https://hdl.handle.net/11511/37841
Journal
ACTA PHYSICA POLONICA A
DOI
https://doi.org/10.12693/aphyspola.119.437
Collections
Department of Physics, Article
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N. Hasanlı, “Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals,”
ACTA PHYSICA POLONICA A
, pp. 437–441, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37841.