2-D analysis of Ge implanted SiO(2) surfaces by laser-induced breakdown spectroscopy

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2008-10-01

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Yalcin, Serife
Oerer, Sabiha
Turan, Raşit

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2-D elemental distribution of Ge in silicon oxide substrates with differing implantation doses of between 3x10(16) cm(-2) and 1.5x10(17) cm(-2) has been investigated by Laser-induced Breakdown Spectroscopy (LIBS). Spectral emission intensity has been optimized with respect to time, crater size, ablation depth and laser energy. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) coupled with Energy-Dispersive X-Ray Spectroscopy (EDX) have been utilized to obtain crater depth, morphology and elemental composition of the sample material, respectively. LIBS spectral data revealed the possibility of performing 2-D distribution analysis of Ge atoms in silicon oxide substrate. EDX analysis results confirmed that LIBS is capable to detect Ge atoms at concentrations lower than 0.2% (atomic). LIBS as a fast semi-quantitative analysis method with 50 mu m lateral and 800 nm depth resolution has been evaluated. Results illustrate the potential use of LIBS for rapid, on-line assessment of the quality of advanced technology materials during the manufacturing process.

Subject Keywords

Instrumentation, Analytical Chemistry, Spectroscopy, Atomic and Molecular Physics, and Optics

URI

https://hdl.handle.net/11511/40778

Journal

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY

DOI

https://doi.org/10.1016/j.sab.2008.09.002

Collections

Department of Physics, Article

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Citation Formats

S. Yalcin, S. Oerer, and R. Turan, “2-D analysis of Ge implanted SiO(2) surfaces by laser-induced breakdown spectroscopy,” SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, pp. 1130–1138, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40778.