Advanced light trapping interface for a-Si:H thin film

Date

2015-04-29

Author

Nasser, Hisham
Saleh, Zaki M.
Ozkol, Engin
Bek, Alpan
Turan, Raşit

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Surface texturing of transparent conducting oxides and plasmonic interfaces are two important techniques used separately in thin film solar cells to reduce reflection and enhance light-trapping. In this study, we merge the effects of Al:ZnO surface texturing and Ag nanoparticles (AgNPs) plasmonics in a single light-trapping interface to investigate their combined light trapping efficiency on a-Si:H thin film. Light scattered by this interface is optimized by placing a thin SiO2 spacer layer between AgNPs and a-Si: H absorber layer. Our results indicate that the AgNPs embedded in SiO2 significantly enhance absorption at energies close to the band gap of a-Si: H. Surface texturing by wet etching of Al: ZnO combined with AgNP produces the highest optical extinction of a-Si:H thin film at the band edge. Furthermore, the measured photocurrent in a-Si:H shows a clear increase not only at AgNPs resonance wavelength but over the entire wavelength range

Subject Keywords

Localized surface plasmons, a-Si:H, Al:ZnO, Wet texturing, Light trapping

URI

https://hdl.handle.net/11511/41064

DOI

https://doi.org/10.1002/pssc.201510097

Collections

Department of Physics, Conference / Seminar

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Citation Formats

H. Nasser, Z. M. Saleh, E. Ozkol, A. Bek, and R. Turan, “Advanced light trapping interface for a-Si:H thin film,” 2015, vol. 12, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41064.