Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector

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Date

2009-05-06

Author

Murib, Mohammed Sharif
Yüce, Emre
GÜRLÜ, Oguzhan
SERPENGÜZEL, Ali

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Elastic scattering intensity calculations at 90 degrees and 0 degrees for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 mu m radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 10(4).

Subject Keywords

RCE photodetector, Morphology dependent resonances, Microspheres, Silicon

URI

https://hdl.handle.net/11511/41341

DOI

https://doi.org/10.1117/12.821198

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Department of Physics, Conference / Seminar

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Citation Formats

M. S. Murib, E. Yüce, O. GÜRLÜ, and A. SERPENGÜZEL, “Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector,” 2009, vol. 7366, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41341.