Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector

Murib, Mohammed Sharif
Yüce, Emre
GÜRLÜ, Oguzhan
Elastic scattering intensity calculations at 90 degrees and 0 degrees for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 mu m radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 10(4).


Optical parameters of anisotropic chain-structured Tl2InGaTe4 crystals by spectroscopic ellipsometry
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2016-01-01)
Spectroscopic ellipsometry measurements were performed on Tl2InGaTe4 single crystals in the 1.2-6.2 eV range for orientations of electric field, parallel (E//c) and perpendicular (E perpendicular to c) to optic axis c. Spectral dependence of optical parameters; real and imaginary components of the dielectric function, refractive index and extinction coefficient were obtained from the analyses of experimental data using an ambient-substrate optical model. The analysis of the absorption data calculated using ...
Distinguishability for Magnetic Resonance-Electric Impedance Tomography (MR-EIT)
Altunel, H.; Eyüboğlu, Behçet Murat; KÖKSAL, ADNAN (2006-09-01)
In magnetic resonance-electrical impedance tomography, magnetic flux density due to current injection is the measured quantity. Different conductivity distributions create different magnetic flux density distributions. Distinguishability for MR-EIT is defined using this fact. The definition is general and valid for 2D as well as 3D structures of any shape. It is not always possible to find an analytic expression for distinguishability. However, when a 2D cylindrical body with concentric inhomogeneity is con...
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01)
Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Hybrid CFIE-EFIE solution of composite geometries with coexisting open and closed surfaces
Ergül, Özgür Salih (2005-07-08)
The combined-field integral equation (CFIE) is employed to formulate the electromagnetic scattering and radiation problems of composite geometries with coexisting open and closed conducting surfaces. Conventional formulations of these problems with the electric-field integral equation (EFIE) lead to inefficient solutions due to the ill-conditioning of the matrix equations and the internal-resonance problems. The hybrid CFIE-EFIE technique introduced in this paper, based on the application of the CRE on the ...
Optoelectronic and electrical properties of TlGaS2 single crystal
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01)
The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
Citation Formats
M. S. Murib, E. Yüce, O. GÜRLÜ, and A. SERPENGÜZEL, “Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector,” 2009, vol. 7366, Accessed: 00, 2020. [Online]. Available: