Optoelectronic and electrical properties of TlGaS2 single crystal

Date

2005-10-01

Author

Qasrawi, AF
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

254
views

0
downloads

The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static refractive index of 2.50. The dark Hall coefficient measurements have shown that the crystals exhibit a conductivity type conversion from p-type to n-type at a critical temperature of 315 K. Deep donor and acceptor energy levels of 0.37/0.36 eV and 0.66 eV has been calculated from the temperature dependence of Hall coefficient and resistivity, and photocurrent measurements, respectively. The photocurrent decreases with decreasing temperature. The analysis of the photocurrent data have revealed that, the recombination mechanism is linear and supralinear above and below 290 K, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42688

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.200521190

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Critical behaviour of the polarization, tilt angle, electric susceptibility and the specific heat close to the SmA-ferroelectric SmC (SmC*) phase transitions Yurtseven, Hasan Hamit; Kilit, E. (Informa UK Limited, 2006-01-01) This study gives the temperature dependence of the two order parameters, namely, polarization P and the tilt angle theta, when there is a biquadratic coupling P-2 theta(2) in the expansion of the Landau free energy. This applies to the electric-field-induced SmA-Ferro-Electric SmC (SmC*) phase transition. From this expansion of the Landau free energy in terms of the polarization and the tilt angle, we obtain the temperature dependence of the electric susceptibility chi and the electric field dependence of t...
Photoelectronic, optical and electrical properties of TlInS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2003-09-01) To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the d...
Nonlinear Seebeck and Peltier effects in quantum point contacts Çipiloğlu, Mustafa A; Turgut, Sadi; Tomak, Mehmet (Wiley, 2004-09-01) The charge and entropy currents across a quantum point contact are expanded as a series in powers of the applied bias voltage and the temperature difference. After that, the expansions of the Seebeck voltage in temperature difference and the Peltier heat in current are obtained. With a suitable choice of the average temperature and chemical potential, the lowest order nonlinear term in both cases appear to be of third order. The behavior of the third-order coefficients in both cases are then investigated fo...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...

Citation Formats

A. Qasrawi and N. Hasanlı, “Optoelectronic and electrical properties of TlGaS2 single crystal,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 2501–2507, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42688.