Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals

Date

2012-11-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit

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Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been characterized from the second derivative spectra of the pseudodielectric function. The analysis revealed four, five and three interband transition structures with critical point energies 2.75, 3.13, 3.72 and 4.45 eV (TlGaSe2), 3.03, 3.24, 3.53, 4.20 and 4.83eV (TlGaS2), and 3.50, 3.85 and 4.50 eV (TlInS2). For TlGaSe2 crystals, the determined critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure.

Subject Keywords

Pseudorefractive index, Ellipsometry, Semiconductors

URI

https://hdl.handle.net/11511/32988

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2012.07.003

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK, N. Hasanlı, and R. Turan, “Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals,” PHYSICA B-CONDENSED MATTER, pp. 4193–4197, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32988.