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Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals
Date
2012-11-01
Author
IŞIK, MEHMET
Hasanlı, Nızamı
Turan, Raşit
Metadata
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Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been characterized from the second derivative spectra of the pseudodielectric function. The analysis revealed four, five and three interband transition structures with critical point energies 2.75, 3.13, 3.72 and 4.45 eV (TlGaSe2), 3.03, 3.24, 3.53, 4.20 and 4.83eV (TlGaS2), and 3.50, 3.85 and 4.50 eV (TlInS2). For TlGaSe2 crystals, the determined critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure.
Subject Keywords
Pseudorefractive index
,
Ellipsometry
,
Semiconductors
URI
https://hdl.handle.net/11511/32988
Journal
PHYSICA B-CONDENSED MATTER
DOI
https://doi.org/10.1016/j.physb.2012.07.003
Collections
Department of Physics, Article
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M. IŞIK, N. Hasanlı, and R. Turan, “Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals,”
PHYSICA B-CONDENSED MATTER
, pp. 4193–4197, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32988.