A systematic study on MOS type radiation sensors

Yilmaz, Ercan
Kaleli, Buket
Turan, Raşit
Radiation sensors based on metal oxide semiconductor (MOS) structure are useful because of their superior sensitivity as well as excellent compatibility with the existing microelectronic technology. In this paper, a systematic study of MOS capacitors built on p- and n-type Si substrates with different SiO2 thicknesses (10 nm, 50 nm, 100 nm and 240 nm) is presented. MOS device response to gamma radiation up to 256 Gray have been studied from the sensor application point of view. Variation of the radiation induced device response with oxide thickness, substrate type, applied bias and post annealing have been measured and discussed. Radiation induced charge in MOS devices is shown to be a strong function of the oxide thickness as expected. Application of a positive bias to the gate is found to enhance the device sensitivity for both n- and p-type devices. This is explained in terms of the involvement of the interface states in the sensing process. Devices have also been studied after repeated cycles of irradiation and annealing treatment under hydrogen atmosphere. Each cycle consists of gamma irradiation with 60 Gray dose and an anneal at 200 degrees C for 30 min. The charging-discharging mechanism during these cycles is discussed.


Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate
YILMAZ, ERCAN; Dogan, Ilker; Turan, Raşit (Elsevier BV, 2008-11-01)
The use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response has been compared with conventional MOS capacitors with a SiO(2) dielectric. The study includes gamma radiation effects with dose up to 4 Gy. The effect of radiation has been determined from the valance band shift in CV curves. The amount of charge induced by the radiation has been calculated and compared with the response of MOS capacitors with SiO(2) with the same and different thicknesses. Fading properti...
Impact of composition modification induced by ion beam Coulomb-drag effects on the nanoindentation hardness of HT9
Gigax, Jonathan G.; Kim, Hyosim; Aydoğan Güngör, Eda; Price, L. M.; Wang, X.; Maloy, S. A.; Garner, F. A.; Shao, L. (Elsevier BV, 2019-04-01)
Accelerator-based ion irradiation is commonly used to simulate neutron damage, in lieu of neutron irradiation due to limited availability of fast flux facilities and little to no activation of the samples. Neutron atypical effects, however, must be recognized and their impact minimized in order to achieve the most accurate microstructural evolution under ion bombardment. Mechanical property changes, which arise from the synergy of numerous radiation-induced changes, are especially susceptible to these neutr...
A Hybrid Simulation Model for Electromagnetic Launchers including the Transient Inductance and Electromotive Force
Tosun, Nail; Polat, Hakan; Ceylan, Doga; Karagoz, Mustafa; Yildirim, Baran; Gungen, Ibrahim; Keysan, Ozan (Institute of Electrical and Electronics Engineers (IEEE), 2020-09-01)
Although electromagnetic launchers (EMLs) are superior to classical gun-powder-based launchers, they have to withstand extreme electrical and mechanical conditions. Therefore, the optimal design and precise simulations of these devices are crucial. In this article, a new simulation strategy for EMLs is proposed in order to achieve high accuracy and reduced complexity. The inductance and electromotive force (EMF) variations in the transient, which have a considerable influence on the launch process, are mode...
Damage relief of ion-irradiated Inconel alloy 718 via annealing
Fincher, Cole D.; Turman, Haley; French, Aaron; Chancey, Matthew; Gigax, Jonathan; Aydoğan Güngör, Eda; Zhao, Dexin; Yadav, Digvijay; Xie, Kelvin; Wang, Yongqiang; Borden, Mike; Shao, Lin; Maloy, S. A.; Pharr, Matt (Elsevier BV, 2020-09-01)
Inconel alloy 718 is a high-strength and corrosion resistant alloy that is commonly used as a beamline vacuum window. The accumulation of irradiation-induced damage substantially decreases the window's service lifetime, and replacing it engenders significant beamline downtime. With this application in mind, herein we examine whether post-irradiation annealing can alleviate irradiation-induced damage of Inconel alloy 718. Inconel alloy 718 was received in a solution annealed state. We then irradiated samples...
Measurement of the intrinsic radiopurity of (CS)-C-137/U-235/U-238/Th-232 in CsI(Tl) crystal scintillators
Zhu, YF; Lin, ST; Singh, V; Chang, WC; Deniz, M; Lai, WP; Li, HB; Li, J; Li, Y; Liao, HY; Lee, FS; Wong, HT; Wu, SC; Yue, Q; Zhou, ZY (Elsevier BV, 2006-02-15)
The inorganic crystal scintillator CsI(TI) has been used for low energy neutrino and Dark Matter experiments, where the intrinsic radiopurity is an issue of major importance. Low-background data were taken with a Csl(TI) crystal array at the Kuo-Sheng Reactor Neutrino Laboratory. The pulse shape discrimination capabilities of the crystal, as well as the temporal and spatial correlations of the events, provide powerful means of measuring the intrinsic radiopurity of Cs-137 as well as the U-215, U-238 and Th-...
Citation Formats
E. Yilmaz, B. Kaleli, and R. Turan, “A systematic study on MOS type radiation sensors,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, pp. 287–292, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41487.