The electronic structure of capped and uncapped CdS nanoparticles

The electronic structure of spherical CdmSn nanoparticles having zinc-blende symmetry and the diameters of up to around 3 nm has been studied by Hartree-Fock theory to find out the effect of the cluster size on the optical energy gap between HOMO and LUMO. The effect of encapsulation on the electronic structure has been also investigated for CdS4 and Cd13S4 clusters embedded in SiO2 matrix and sodalite cage by Hartree-Fock theory. It was found that the energy gap of CdS nanoparticles can be regulated by both the cluster size and the interface provided by the SiO2 matrix and sodalite cage. The energy gap between HOMO and LUMO has been found to be increased to upper boundary of the visible spectra when CdS, and Cd13S1 clusters have been embedded in either SiO2 matrix or sodalite cage.


Scanning Hall Probe Microscopy (SHPM) using quartz crystal AFM feedback
Dede, M.; Uerkmen, K.; Girisen, Oe.; Atabak, M.; Oral, Ahmet; Farrer, I.; Ritchie, D. (American Scientific Publishers, 2008-02-01)
Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of similar to 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; ther...
The electronic structure of a quantum well under an applied electric field
Sari, H; Ergun, Y; Sokmen, I; Tomak, Mehmet (Elsevier BV, 1996-01-01)
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined critically. For higher electric field values it is shown that the quasi-bound state approximation for the ground and first excited state of the electron, and for the ground state of the hole is valid. (C) 1996 Academic Press Limited
Optical anisotropy in GaSe
Seyhan, A; Karabulut, O; Akınoğlu, Bülent Gültekin; Aslan, B; Turan, Raşit (Wiley, 2005-09-01)
Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals
Hasanlı, Nızamı (Wiley, 2009-03-01)
The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Anisotropic electrical and dispersive optical parameters in InS layered crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-02-01)
The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range ...
Citation Formats
I. Ercan and Ş. Katırcıoğlu, “The electronic structure of capped and uncapped CdS nanoparticles,” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 645–649, 2008, Accessed: 00, 2020. [Online]. Available: