Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

Date

2009-03-01

Author

Hasanlı, Nızamı

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The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4.4 x 10(-4) eV/K. The absolute zero value of the band gap energy was obtained as E-gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 x 10(-7) m and 9.64 x 10(13) m(-2), respectively. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40728

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200800369

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 322–326, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40728.