SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer

Arslan, Engin
Cakmakyapan, Semih
Kazar, Ozgur
Butun, Serkan
Lisesivdin, Sefer Bora
Cinel, Neval A.
Ertaş, Gülay
Ardali, Sukru
Tiras, Engin
Jawad-ul-Hassan, Jawad-ul-Hassan
Janzen, E.
Ozbay, Ekmel
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm(2)/Vs at 300 K) and one low-mobility carrier (1115 cm(2)/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.


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The temperature and pressure dependences of the Raman frequencies of the lattice modes (E-g and B-1g modes) and of an internal mode (2331 cm(-1)) are predicted using the observed molar volume data from the literature in the gamma-phase of solid N-2. This calculation is carried out by means of the mode Gruneisen parameter of each Raman mode in the gamma-phase of solid nitrogen. Our results show that the predicted Raman frequencies of the E-g mode increase as the pressure increases. The Raman frequencies of t...
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Residual stress in air plasma-sprayed Y2O3 stabilized ZrO2 thermal barrier coating (TBC) has been measured using micro-Raman spectroscopy. The frequency shift of Raman peak from tetragonal phase (approximate to 640 cm(-1)) is used for determination of local stress in TBC. The relation between Raman peak shift and applied uniaxial stress is measured using a freestanding specimen. The relation is used to determine actual residual stress of the TBC layer coated on a stainless steel substrate. The uniaxial stre...
Citation Formats
E. Arslan et al., “SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer,” ELECTRONIC MATERIALS LETTERS, pp. 387–391, 2014, Accessed: 00, 2020. [Online]. Available: