SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer

Arslan, Engin
Cakmakyapan, Semih
Kazar, Ozgur
Butun, Serkan
Lisesivdin, Sefer Bora
Cinel, Neval A.
Ertaş, Gülay
Ardali, Sukru
Tiras, Engin
Jawad-ul-Hassan, Jawad-ul-Hassan
Janzen, E.
Ozbay, Ekmel
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm(2)/Vs at 300 K) and one low-mobility carrier (1115 cm(2)/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.


Temperature effects on the properties of Ge thin films
Günal, İbrahim (1999-10-01)
The effects of substrate temperature (T-s) on the properties of vacuum evaporated p-type Ge thin films have been investigated for 25 < T-s < 400 degrees C. Increase in the substrate temperature improves the crystallinity and increases the grain size resulting a gradual change from amorphous to polycrystalline structure which was attained above a substrate temperature of 225 degrees C. Low resistive (1 x 10(-2) ohm-cm) and high mobility (280 cm(2)/V . s) films were obtained at T-s = 400 degrees C. It has bee...
Temperature and Pressure Effect on the Raman Frequencies Calculated from the Crystal Volume in the gamma-Phase of Solid Nitrogen
Yurtseven, Hasan Hamit (Springer Science and Business Media LLC, 2015-09-01)
The temperature and pressure dependences of the Raman frequencies of the lattice modes (E-g and B-1g modes) and of an internal mode (2331 cm(-1)) are predicted using the observed molar volume data from the literature in the gamma-phase of solid N-2. This calculation is carried out by means of the mode Gruneisen parameter of each Raman mode in the gamma-phase of solid nitrogen. Our results show that the predicted Raman frequencies of the E-g mode increase as the pressure increases. The Raman frequencies of t...
Production of epoxide functionalized boehmite nanoparticles and their use in epoxide nanocomposites
Coniku, Anisa; Gündüz, Güngör; Maviş, Bora; Department of Chemical Engineering (2012)
In the present study the effects of addition of organically functionalized boehmite nano-particles on the mechanical properties of epoxy polymers were analyzed. Nanosize platelets of boehmite powders were produced via a hydrothermal process from the raw material aluminum trihydroxide Al(OH)3 provided by a a chemical supplier, but which in future studies can be replaced by local resources of aluminum trihydroxide available in Seydişehir, Turkey. The ground aluminum trihydroxide particles were submitted to a ...
Landau mean-field model with the cubic term for the alpha-beta transition in quartz
Ates, S.; Yurtseven, Hasan Hamit (Springer Science and Business Media LLC, 2020-06-01)
Thermodynamic quantities are calculated as a function of temperature by using Landau mean-field model for the alpha-beta transition in quartz. By expanding the Gibbs free energy in terms of the order parameter (Q) with the cubic term (Q(3)), the temperature dependence of the relevant thermodynamic quantities are predicted using the heat capacity (C-P), which is fitted to the experimental data from the literature for the alpha-beta transition in quartz. Our results indicate that the Landau mean-field model i...
Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements
Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01)
Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Citation Formats
E. Arslan et al., “SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer,” ELECTRONIC MATERIALS LETTERS, pp. 387–391, 2014, Accessed: 00, 2020. [Online]. Available: