Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals

Golksen, K.
Hasanlı, Nızamı
Photoluminescence spectra of Tl4GaIn3S8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (lambda(exc) = 532 nm), and at T = 26 K with intrinsic excitation source (lambda(exc) = 406 nm). Three emission bands A, B and C centered at 514 nm (2.41 eV), 588 nm (2.11 eV) and 686 nm (1.81 eV), respectively, were observed for extrinsic excitation process. Variations in emission spectra have been studied as a function of excitation laser intensity in the 0.9-183.0 mW cm(-2) range for extrinsic excitation at T = 26 and 50 K. Radiative transitions from the donor levels located at 0.03 and 0.01 eV below the bottom of the conduction band to the acceptor levels located at 0.81 and 0.19 eV above the top of the valence band were proposed to be responsible for the observed A- and C-bands. The anomalous temperature dependence of the B-band peak energy was explained by configurational coordinate model. From X-ray powder diffraction and energy dispersive spectroscopic analysis, the monoclinic unit cell parameters and compositional parameters of Tl4GaIn3S8 crystals were determined, respectively. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


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Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K, We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing tempera...
Citation Formats
K. Golksen and N. Hasanlı, “Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 514–521, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41654.