Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition

Date

2006-11-01

Author

İmer, Muhsine Bilge
Cravens, Michael D.
Speck, James S.
DenBaars, Steven P.

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We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpolar (11 (2) over bar0) a-plane heteroepitaxial planar GaN films. The threading dislocation density of m-GaN on m-plane 6H-SiC was one order of magnitude lower than that of a-GaN on a-plane 6H-SiC.

Subject Keywords

General Engineering, General Physics and Astronomy

URI

https://hdl.handle.net/11511/42009

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS

DOI

https://doi.org/10.1143/jjap.45.8644

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

M. B. İmer, M. D. Cravens, J. S. Speck, and S. P. DenBaars, “Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition,” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, pp. 8644–8647, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42009.