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Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors
Date
2004-01-01
Author
Aslan, B
Turan, Raşit
Liu, HC
Baribeau, JM
Buchanan, M
Chow-Chong, P
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si1-xGex/Si junctions with x=0.1 and x=0.23, allows the tuning of the cut-off wavelength from 19.9 mum to 11.7 mum for 10 K and 50 K, respectively.
Subject Keywords
Physics and Astronomy (miscellaneous)
,
General Physics and Astronomy
URI
https://hdl.handle.net/11511/42119
Journal
APPLIED PHYSICS B-LASERS AND OPTICS
DOI
https://doi.org/10.1007/s00340-003-1343-z
Collections
Department of Physics, Article