Gallium and thallium NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2

Date

2004-06-01

Author

Panich, AM
Ailion, DC
Kashida, S
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

27
views

0
downloads

We report on the first NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2. Ga-69,Ga-71 and Tl-205 NMR data from a powder sample show phase transitions at 118, 108 and around 69 K. The Ga-69 and Ga-71 spin-lattice relaxation times T-1 are short and nearly temperature independent in the temperature range 118 to 108 K, which is characteristic of an incommensurate state. The nuclear magnetization recovery in this temperature range can be fit by two components having different time constants. The ratio of the amplitudes of the components varies with temperature. Such behavior is consistent with the coexistence in this temperature range of two different macroscopic domains, such that one of the domains becomes energetically favored on cooling. The phase transition into a ferroelectric phase at 108 K appears to be accompanied by a displacement of Tl atoms.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42156

Journal

PHYSICAL REVIEW B

DOI

https://doi.org/10.1103/physrevb.69.245319

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally stimulated currents in layered Ga4SeS3 semiconductor Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01) Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...
ANOMALOUS AMPLITUDE DEPENDENT DISLOCATION DAMPING ASSOCIATED WITH ANHARMONIC OSCILLATIONS OF A COULOMBIC KINK CHAIN IN THE NONLINEAR DISSIPATIVE ATMOSPHERE OF IMPURITY ATOMS OGURTANI, TO (Wiley, 1991-11-16) The effects of the anharmonic interaction of the Coulombic kink chain on the strength and the position of the cold-work internal friction peaks associated with the nonlinearly power dissipating impurity atoms are investigated by a novel numerical simulation of the related discrete mathematical macro-model. The present macroscopic model of dislocation damping which relies heavily on the microscopic theory of kink-interstitial interactions shows very strong anomalous strain amplitude as well as the bias stres...
Nonlinear intersubband optical absorption of Si delta-doped GaAs under an electric field Yildirim, Hasan; Tomak, Mehmet (Wiley, 2006-10-01) We study the nonlinear intersubband optical absorption of a single Si delta-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schrodinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed wit...
Molecular-dynamics simulations of surface and bulk properties of Zn, Cd, and ZnCd systems Amirouche, L; Erkoç, Şakir (Wiley, 2004-02-01) Surface and bulk properties of Zn, Cd, and ZnCd systems have been investigated by performing molecular-dynamics simulations using a recently developed empirical many-body potential energy function for these systems, which comprices two- and three-body atomic interactions. Surface reconstruction and multilayer relaxation on clean surfaces, adatom on surface, substitutional atom on surface and bulk materials, and vacancy on surface and bulk materials have been studied extensively. (C) 2004 WILEY-VCH Verlag Gm...
RAMAN-SPECTROSCOPY OF SOFT AND RIGID MODES IN FERROELECTRIC TLINS2 BURLAKOV, VM; RYABOV, AP; YAKHEEV, MP; VINOGRADOV, EA; MELNIK, NN; Hasanlı, Nızamı (Wiley, 1989-06-01) Low‐frequency Raman spectra of a TlInS2 single crystal in the vicinity of a ferroelectric phase transition are reported. In the ferroelectric phase a soft mode interacting with some rigid modes is observed. The temperature dependence of the soft mode frequency is found to be proportional to (Tc – T)1/2. An unusual behaviour of the rigid mode (ω = 20 cm−1) is observed. This fact is interpreted in terms of inherent lattice defects which cause nonhomogeneous broadening.

Citation Formats

A. Panich, D. Ailion, S. Kashida, and N. Hasanlı, “Gallium and thallium NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2,” PHYSICAL REVIEW B, pp. 0–0, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42156.