Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals

Date

2014-10-01

Author

Isik, M.
Hadibrata, W.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

174
views

0
downloads

Trapping centers in as-grown GaSe single crystals have been investigated by thermoluminescence (TL) measurements in the temperature range of 30-300 K. The analysis of the observed peaks in TL glow curve to determine the activation energies of the associated centers were accomplished using curve fitting, initial rise and peak shape methods. Activation energies of the revealed four trapping centers obtained from various methods were in good agreement with each other on the energy values of 0.14, 0.18, 0.24 and 037 eV. The annealing effect on the TL properties of the GaSe single crystals was also studied for the annealing temperature of 500 degrees C. It was observed that annealing significantly decreased the U intensity and shifted the observed peaks to lower temperature resulting with smaller activation energy values. The distribution of the trapping centers with most intensive peak was also studied on both as-grown and annealed crystals.

Subject Keywords

Biophysics, Atomic and Molecular Physics, and Optics, Biochemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42490

Journal

JOURNAL OF LUMINESCENCE

DOI

https://doi.org/10.1016/j.jlumin.2014.04.010

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermoluminescence characteristics of Bi 12 SiO 20 single crystals Isik, M.; SARIGÜL, NESLİHAN; Hasanlı, Nızamı (Elsevier BV, 2020-08-01) Trapping center properties of bismuth silicon oxide (Bi12SiO20) single crystals were investigated by thermoluminescence (TL) measurements performed in the 50–400 °C temperature range. Experimental TL curve recorded at heating rate of 1 °C/s presented two overlapped peaks around 279 and 362 °C. The heating rate dependency of TL curve was also studied for heating rates between 1 and 6 °C/s. The measured TL curves were analyzed using curve fitting, initial rise and different heating rate methods. The results o...
TL and TSC studies on TlGaSe2 layered single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (Elsevier BV, 2013-12-01) Defects in - as grown - TlGaSe2 layered single crystals were investigated using Thermoluminescence (TL) and Thermally Stimulated Currents (TSC) techniques in the temperature range 10-300 K. TL and TSC curves of samples illuminated using a light with energy greater than the band gap of the material, i.e. blue light (similar to 470 nm) at 10 K, exhibited peaks around 27 and 28 K, respectively, when measured by heating up the samples at a rate of 1 K/s. TL and TSC curves were analyzed to characterize the defec...
TL and OSL studies on gallium sulfide (GaS) single crystals Isik, M.; YÜKSEL, MEHMET; TOPAKSU, MUSTAFA; Hasanlı, Nızamı (Elsevier BV, 2020-09-01) Gallium sulfide (GaS) single crystals were investigated using thermoluminescence (TL) and optically stimulated luminescence (OSL) measurements. TL experiments performed in the room temperature (RT)-450 °C range presented a glow curve consisting in six single discrete peaks. Analyses of TL glow curve by computerized glow curve deconvolution method showed that the trapping centers responsible for peaks are located at 0.98, 1.09, 1.15, 1.76, 1.87 and 1.90 eV. The order of kinetics found between 1 and 2 indicat...
Dispersive optical constants of Tl2InGaSe4 single crystals Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-09-01) The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band ...
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...

Citation Formats

M. Isik, W. Hadibrata, and N. Hasanlı, “Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals,” JOURNAL OF LUMINESCENCE, pp. 131–135, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42490.