Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals

Qasrawi, AF
Hasanlı, Nızamı
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conductivity exhibits activation behaviour with activation energies (0.360 +/- 0.005) eV and (0.240 +/- 0.005) eV at high and low temperatures, respectively. The space charge limited current analysis has shown that the energy level of (0.240 +/- 0.005) eV is a trapping state with trap density of (2.2-3.9) x 10(12) cm(-3). The data analysis of the photocurrent-temperature dependence has revealed two photoconductivity activation energies of (0.660 +/- 0.005) eV and (0.360 +/- 0.005) eV in the temperature regions of 290-350 K and 220-280 K, respectively. The illumination dependence of photoconductivity is found to exhibit linear and supralinear recombination mechanisms above and below 290 K, respectively.


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Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
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Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01)
To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Optoelectronic and electrical properties of TlGaS2 single crystal
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01)
The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
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The temperature dependence of the polarization P and the tilt angle theta is calculated here in the presence of a constant electric field near the smectic AC* phase transition of a ferroelectric liquid crystal using a mean field model. We demonstrate here the temperature dependence of P and theta under some fixed electric fields for the ferroelectric liquid crystal of 4-(3-methyl-2-chlorobutanoyloxy)-4'-heptyloxybiphenyl. Our predicted values of P and theta at various temperatures under fixed electric field...
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Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01)
We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...
Citation Formats
A. Qasrawi and N. Hasanlı, “Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 446–452, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35239.