Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes

Date

2019-04-01

Author

Gullu, H. H.
YILDIZ, DİLBER ESRA
Surucu, O. Bayrakli
Terlemezoğlu, Makbule
Parlak, Mehmet

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Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (Phi(B0)) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung's theoretical approach, a linear correlation between Phi(B0) and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A*). As a result, A* was calculated approximately as 120.6 A cm(-2) K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R-s) by estimating from Cheng's function and density of surface states (N-ss) by taking the bias dependence of effective barrier height, were discussed.

Subject Keywords

General Materials Science, Mechanics of Materials

URI

https://hdl.handle.net/11511/44499

Journal

BULLETIN OF MATERIALS SCIENCE

DOI

https://doi.org/10.1007/s12034-018-1713-0

Collections

Department of Physics, Article

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Citation Formats

H. H. Gullu, D. E. YILDIZ, O. B. Surucu, M. Terlemezoğlu, and M. Parlak, “Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes,” BULLETIN OF MATERIALS SCIENCE, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44499.