Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals

Date

2004-07-02

Author

Qasrawi, AF
Hasanlı, Nızamı

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Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/41722

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/j.materresbull.2003.12.018

Collections

Department of Physics, Article

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Citation Formats

A. Qasrawi and N. Hasanlı, “Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals,” MATERIALS RESEARCH BULLETIN, pp. 1353–1359, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41722.