Hall mobility and photoconductivity in TlGaSeS crystals

Qasrawi, A. F.
Hasanlı, Nızamı
In this work, the fundamental properties of the TlGaSeS single crystals are investigated by means of temperature dependent electrical resistivity and Hall mobility. The crystal photo-responsibility as function of illumination intensity and temperature is also tested in the temperature range of 350-160 K. The study allowed the determination of acceptor centers as 230 and 450 meV below and above 260 K, and recombination centers as 181, 363, and 10 meV at low, moderate, and high temperatures, respectively. While the temperature-dependent Hall mobility behaved abnormally, the photoconductivity analysis reflected an illumination intensity dependent recombination center. Namely, the recombination center increased from 10 to 90 meV as the light intensity increased from 27.9 to 76.7 mW cm(-2), respectively. That strange behavior was attributed to the temporary shift in Fermi level caused by photoexcitation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775577]


Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2004-03-01)
TlGaSe2 layered crystals are studied through dark electrical conductivity, Hall mobility, space-charge limited current and illumination- and temperature-dependent photoconductivity in the temperature ranges 120-350 K, 220-350 K, 260-350 K and 120-350 K, respectively. The Hall effect measurements revealed the extrinsic p-type conduction. The Hall mobility increase with decreasing temperature is limited by the thermal lattice scattering. The space-charge limited current and dark conductivity measurements pred...
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Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-01-01)
Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the ele...
Optimization of open-tube furnace diffusion with Bbr3 liquid source for industrial p-type boron doping process
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In this study, optimization of boron emitter for n-type crystalline Si solar cells has been studied in detail. Industrial open-tube (atmospheric) furnace with BBr3 as liquid B source was utilized which is a preferred dopant for the diffusion process of n-type wafers in industry [1] [2]. During the processes, full boat (270 wafers) n-type square samples were used to investigate the uniformity from gas zone to door zone and inside the wafer. To achieve uniform boron emitters on large n-type substrates, parame...
Transport and recombination kinetics in TlGaTe2 crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2009-11-01)
In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of ...
Citation Formats
A. F. Qasrawi and N. Hasanlı, “Hall mobility and photoconductivity in TlGaSeS crystals,” JOURNAL OF APPLIED PHYSICS, pp. 0–0, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45593.