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Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals
Date
2002-01-01
Author
Qasrawi, AF
Hasanlı, Nızamı
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/47109
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/1521-4079(200206)37:6<587::aid-crat587>3.0.co;2-z
Collections
Department of Physics, Article