Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals

Date

2002-01-01

Author

Qasrawi, AF
Hasanlı, Nızamı

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Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47109

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/1521-4079(200206)37:6<587::aid-crat587>3.0.co;2-z

Collections

Department of Physics, Article

Citation Formats

A. Qasrawi and N. Hasanlı, “Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, vol. 37, no. 6, pp. 587–594, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47109.