Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals

2002-01-01
Qasrawi, AF
Hasanlı, Nızamı
Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.
Citation Formats
A. Qasrawi and N. Hasanlı, “Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, vol. 37, no. 6, pp. 587–594, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47109.