Transport and recombination kinetics in TlGaTe2 crystals

Hasanlı, Nızamı
In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of an energy state of 258 meV The hole-relaxation time that was determined from the Hall mobility data was observed to increase with decreasing temperature. The behavior was attributed to the hole-thermal lattice scattering interactions. At fixed photoexcitation intensity, the photocurrent I-ph decreases with decreasing temperature down to 150 K. Below this temperature it changes direction. The latter data allowed the determination of the recombination center energy as 1 10 meV On the other hand, at fixed temperature and variable illumination intensity, the photocurrent follows the relation I-ph alpha F-n (the value of the exponent, it, decreases with decreasing temperature). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Characterization of Ag/TlInSe2/Ag structure
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2011-07-01)
In this work, the current voltage characteristics of Ag/TlInSe2/Ag and In/TlInSe2/In structures, the incident light intensity and time dependencies of photocurrent as well as the response time-illumination intensity dependence of Ag/TlInSe2/Ag structures have been studied. For bias voltages larger than 1200. and 4.0 V, the current injection was found to be space charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, res...
Photoelectronic and electrical properties of InS crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01)
To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01)
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01)
The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Transport and recombination kinetics in TlGaTe2 crystals,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 2555–2558, 2009, Accessed: 00, 2020. [Online]. Available: