Characterization of T1InS1.8Se0.2 as advanced functional crystals

Date

2018-11-15

Author

Qasrawi, A. F.
Atatreh, Areen A. M.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

97
views

0
downloads

In this work, selenium doped TlInS1.8Se0.2 crystals are used to fabricate multifunctional devices that can handle more than one duty at a time. After revealing the morphological, compositional, structural and optical properties of the doped crystal, it is sandwiched between Ag and carbon metals. The crystals are characterized by means of ultraviolet-visible light spectrophotometry, impedance spectroscopy and illumination dependent current-voltage characteristics techniques. While the optical spectroscopy allowed determining the energy band gap of the crystals as well as the optical conductivity in the terahertz frequency domain, the impedance spectroscopy allowed identifying the conductance and reflectance spectra in the gigahertz frequency domain. The two techniques reveal promising characteristics presented by optical switching at 2.20 eV and band pass filtering properties in mega/gigahertz frequency domains. On the other hand, the analysis of the current (I)- voltage (V) characteristics which are recorded in the dark and under photoexcitation of unfiltered tungsten light in the light power range of 25-130 mW, revealed light intensity dependent rectifying properties. Particularly, the modeling of the experimental I-V curves in accordance with the Richardson Schottky and Chueng's theoretical approaches have shown that the Schottky diode ideality factor, series resistance and barrier height decreases with increasing light power. Such behavior indicates wide tunability of the device when used as photosensors. With the features presented by small size, photosensitivity, gigahertz/terahertz spectral responses, the device can be promising element for use in visible light and microwave communications.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/45956

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2018.07.022

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Trapping parameters of repulsive centers in SbSI single crystals Ozdemir, S; Firat, T; Mamedov, AM (Elsevier BV, 2004-06-08) Charge trapping centers in antimony sulphide iodide (SbSI) single crystals have been investigated by the use of thermally stimulated current (TSC) technique. The TSC spectrum consists of only one apparent peak which is found to be associated with a single trapping level. Those traps are experimentally found to obey the monomolecular kinetics. The trapping parameters as the energy depth, temperature dependent frequency factor and capture cross section together with the concentrations of the corresponding dis...
Efficient fabrication of ultrafine-grained 316L stainless steel surfaces for orthopaedic applications Tufan, Yiğithan; Efe, Mert; Ercan, Batur (Informa UK Limited, 2019-10-13) Commonly used severe plastic deformation (SPD) methods are suitable for fabrication of bulk nano and ultrafine-grained metals. Drawbacks of these methods include durability of dies, geometrical restrictions and reduced ductility of the products. In this study, two common machining techniques used in manufacturing of orthopaedic components, turning and milling, were applied on 316L stainless steel as surface SPD to refine the surface microstructures of the workpiece. Machining with optimised parameters resul...
In-situ observation of nano-oxide and defect evolution in 14YWT alloys Aydoğan Güngör, Eda; Li, M.; Maloy, S.A. (Elsevier BV, 2020-12-01) © 2020 Elsevier Inc.Nanostructured ferritic alloys (NFAs) are considered as candidates for structural components in advanced nuclear reactors due to their excellent radiation resistance as a result of a high density of nano-oxides (NOs) in the microstructure. Therefore, gaining an understanding on the stability of NOs under irradiation is crucial. In this study, we have investigated the evolution of defects and NOs in 14YWT NFAs under in-situ Kr ion irradiation at room temperature (RT) and 450 °C up to 10 d...
Observation of in situ enhanced crystallization, negative resistance effect and photosensitivity in Tl2InGaSe4 crystals Qasrawi, A. F.; Irshaid, Tahani M. A.; Hasanlı, Nızamı (Elsevier BV, 2021-02-01) In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, Tl2InGaSe4 crystals are grown by the modified Bridgman method using mixtures of TlInSe2 (50%) and TlGaSe2 (50%) single crystals. The enhanced crystallization and structural stabilities are monitored by the X-ray diffraction technique during the in situ heating and cooling cycles. The structural analyses on the Tl2InGaSe4 crystals revealed domination of both of the monoclinic and tetragonal phases in the crysta...
Preparation and characterization of zeolite framework stabilized cuprous oxide nanoparticles Zahmakiran, Mehmet; Özkar, Saim (Elsevier BV, 2009-05-15) Zeolite framework stabilized copper(I) oxide nanoparticles (4.8 +/- 2.6 nm) were prepared for the first time by using a four step procedure: the ion exchange of Cu(2+) ions with the extra framework Na(+) ions in Zeolite-Y, the reduction of the Cu(2+) ions within the cavities of zeolite with sodium borohydride in aqueous solution, the dehydration of Zeolite-Y with the copper(0) nanoclusters, and the oxidation of intrazeolite copper(0) nanoclusters by O(2) at room temperature. Zeolite stabilized copper(I) oxi...

Citation Formats

A. F. Qasrawi, A. A. M. Atatreh, and N. Hasanlı, “Characterization of T1InS1.8Se0.2 as advanced functional crystals,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 174–180, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/45956.