Temperature-tuned band gap properties of MoS2 thin films

Date

2020-09-15

Author

Surucu, O.
Isik, M.
Hasanlı, Nızamı
Terlemezoğlu, Makbule
Parlak, Mehmet

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MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46235

Journal

Materials Letters

DOI

https://doi.org/10.1016/j.matlet.2020.128080

Collections

Department of Physics, Article

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Citation Formats

O. Surucu, M. Isik, N. Hasanlı, M. Terlemezoğlu, and M. Parlak, “Temperature-tuned band gap properties of MoS2 thin films,” Materials Letters, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46235.