Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Videos
Videos
Thesis submission
Thesis submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Contact us
Contact us
Structural stability and electronic properties of different cross-sectional unstrained and rectangular cross-sectional strained GaP nanowires
Date
2019-02-10
Author
Mohammad, Rezek
Katırcıoğlu, Şenay
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
8
views
0
downloads
Cite This
The stability and electronic properties of the hexagonal, trigonal and rectangular cross-sectional GaP nanowires in wurtzite (WZ) phase are investigated using full potential linear augmented plane waves method. The rectangular cross-sectional nanowires are found more stable than the hexagonal and trigonal ones. The indirect bandgap structure of the nanowires is transformed into the direct bandgap one at a critical size connected to the geometry of the cross-section. The energy bandgap of the nanowires in the same cross-sectional group is enlarged by the quantum size effect. The effective carrier masses in the nanowires, calculated to be larger than those in bulk GaP, are found to slightly increase with the decrease in the size of the nanowires in the same cross-sectional groups. The mechanical strain effect on the electronic band structure is investigated for the rectangular GaP nanowires under the uniaxial and lateral strains. It is found that the indirect bandgap structures of the rectangular nanowires are transformed into the direct bandgap ones by the uniaxial high compression strains. It is also found that this transformation can be triggered by small uniaxial tensile and high lateral tensile strains in addition to the effect of size increase. The energy bandgap of the rectangular nanowires is determined to be narrowed by the uniaxial/lateral strains. It is obtained that the small rectangular nanowire is in the indirect bandgap structure for all the lateral strains and the larger one can be transformed into the direct bandgap structure more easily by the x-directional lateral tensile strains compared to the y-directional ones. The effective electron and hole masses are found to be reduced by the uniaxial highest tensile and compression strains of this work. It is determined that the lateral strains are not effective in making the electrons of the nanowires more mobile, but the y-directional lateral high tensile strains make the holes more mobile by reducing the effective hole mass in the small rectangular nanowire.
Subject Keywords
Statistical and Nonlinear Physics
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/46422
Journal
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
DOI
https://doi.org/10.1142/s0217979219500061
Collections
Department of Physics, Article
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
R. Mohammad and Ş. Katırcıoğlu, “Structural stability and electronic properties of different cross-sectional unstrained and rectangular cross-sectional strained GaP nanowires,”
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
, vol. 33, no. 4, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46422.