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Time-resolved XPS analysis of the SiO2/Si system in the millisecond range
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Date
2004-04-29
Author
Demirok, UK
Ertaş, Gülay
Suzer, S
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By applying voltage pulses to the sample rod while recording the spectrum, we show, for the first time, that it is possible to obtain a time-resolved XPS spectrum in the millisecond range. The Si 2p spectrum of a silicon sample containing a ca. 400-nm oxide layer displays a time-dependent charging shift of ca. 1.7 eV with respect to the Au 4f peaks of a gold metal strip in contact with the sample. When gold is deposited as C-12-thiol-capped nanoclusters onto the same sample, this time the Au 4f peaks also display time-dependent charging behavior that is slightly different from that of the Si 2p peak. This charging/discharging is related to emptying/filling of the hole traps in the oxide layer by the stray electrons within the vacuum system guided by the external voltage pulses applied to the sample rod, which can be used to extract important parameter(s) related to the dielectric properties of surface structures.
Subject Keywords
Physical and Theoretical Chemistry
,
Materials Chemistry
,
Surfaces, Coatings and Films
URI
https://hdl.handle.net/11511/47241
Journal
JOURNAL OF PHYSICAL CHEMISTRY B
DOI
https://doi.org/10.1021/jp049526m
Collections
Department of Chemistry, Article
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U. Demirok, G. Ertaş, and S. Suzer, “Time-resolved XPS analysis of the SiO2/Si system in the millisecond range,”
JOURNAL OF PHYSICAL CHEMISTRY B
, pp. 5179–5181, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47241.