Time-resolved XPS analysis of the SiO2/Si system in the millisecond range

Download

index.pdf

Date

2004-04-29

Author

Demirok, UK
Ertaş, Gülay
Suzer, S

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

149
views

0
downloads

By applying voltage pulses to the sample rod while recording the spectrum, we show, for the first time, that it is possible to obtain a time-resolved XPS spectrum in the millisecond range. The Si 2p spectrum of a silicon sample containing a ca. 400-nm oxide layer displays a time-dependent charging shift of ca. 1.7 eV with respect to the Au 4f peaks of a gold metal strip in contact with the sample. When gold is deposited as C-12-thiol-capped nanoclusters onto the same sample, this time the Au 4f peaks also display time-dependent charging behavior that is slightly different from that of the Si 2p peak. This charging/discharging is related to emptying/filling of the hole traps in the oxide layer by the stray electrons within the vacuum system guided by the external voltage pulses applied to the sample rod, which can be used to extract important parameter(s) related to the dielectric properties of surface structures.

Subject Keywords

Physical and Theoretical Chemistry, Materials Chemistry, Surfaces, Coatings and Films

URI

https://hdl.handle.net/11511/47241

Journal

JOURNAL OF PHYSICAL CHEMISTRY B

DOI

https://doi.org/10.1021/jp049526m

Collections

Department of Chemistry, Article

Suggestions

OpenMETU
Core

Differential charging in SiO2/Si system as determined by XPS Karadas, F; Ertaş, Gülay; Suzer, S (American Chemical Society (ACS), 2004-01-29) The Si2p binding and the Si-KLL kinetic energy difference between the SiO2 layer and Si substrate is shown to be influenced by application of external voltage bias to the sample holder due to the differential charging as was already reported earlier (Ulgut, B.; Suzer, S. J. Phys. Chem. B 2003, 107, 2939). The cause of this bias induced (physical)-shift is now proven to be mostly due to partial neutralization by the stray electrons within the vacuum system by (i) introducing additional stray electrons via a ...
Order-disorder phase transition in NH4AlF4 Yurtseven, Hasan Hamit (Springer Science and Business Media LLC, 2002-12-01) In this study we calculate the specific heat C-VI for NH4AlF4 due to the nearest-neighbor interactions between the NH4+ tetrahedra using an Ising model superimposed on an Einstein and/or Debye model. The specific beat C-VI calculated using a power-law formula is in good agreement with the observed C-P for the NH4AlF4 system. This is an indication that NH4AlF4 undergoes a weak first-order or a nearly second-order phase transition as predicted by our model.
Nonlinear optical rectification in asymmetrical semiparabolic quantum wells Karabulut, I; Safak, H; Tomak, Mehmet (Elsevier BV, 2005-09-01) The optical rectification in a semiparabolic quantum well is theoretically investigated. The electronic states in a semiparabolic quantum well are calculated exactly, within the envelope function and the displaced harmonic oscillator approach. The nonlinearity resulting from the asymmetry of the confining potential is studied in the lowest order. The numerical results for the typical AlxGa1-xAs/GaAs material show that the large optical rectification coefficient decreases with increasing confining potential ...
Enhanced peak separation in XPS with external biasing Ertaş, Gülay; Suzer, S (Elsevier BV, 2005-08-15) We have demonstrated that the An 4f peaks of the capped gold nanoparticles deposited on a SiO2 (20 nm)/Si substrate can be separated form the An 4f peaks of a gold metal strip, in contact with the same sample, by application of an external voltage bias to the sample rod while recording the XPS spectra. The external bias controls the flow of low-energy electrons falling on to the sample which in-turn controls the extent of the differential charging of the oxide layer leading to shifts in the binding energy o...
Vibrational absorption spectra calculated from vibrational configuration interaction response theory using the Lanczos method Seidler, Peter; Hansen, Mikkel Bo; Gyorffy, Werner; Toffolı, Danıele; Christiansen, Ove (AIP Publishing, 2010-04-28) The Lanczos method is used to efficiently obtain the linear vibrational response function for all frequencies in an arbitrary interval. The complex part of the response function gives the absorption spectrum which can subsequently be analyzed. The method provides a way to obtain global information on the absorption spectrum without explicitly converging all vibrational eigenstates of the system. The tridiagonal Lanczos matrix used to obtain the response functions needs only be constructed once for each oper...

Citation Formats

U. Demirok, G. Ertaş, and S. Suzer, “Time-resolved XPS analysis of the SiO2/Si system in the millisecond range,” JOURNAL OF PHYSICAL CHEMISTRY B, pp. 5179–5181, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47241.