Electrical characterization of CdZnTe/Si diode structure

Date

2020-07-01

Author

Balbasi, C. Dogru
Terlemezoğlu, Makbule
Gullu, H. H.
Yildiz, D. E.
Parlak, M.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

178
views

0
downloads

Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased current, the diode parameters such as saturation current (I-0), zero-bias barrier height (Phi(B0)) and ideality factor (n) have been obtained. The barrier height increased (0.53 to 0.80 eV) while the ideality factor decreased (4.63 to 2.79) with increasing temperature from 220 to 340 K, indicating an improvement in the junction characteristics at high temperatures. Due to the inhomogeneity in barrier height, the conduction mechanism was investigated by Gaussian distribution analysis. Hence, the mean zero-bias barrier height ((Phi) over bar (B0)) and zero-bias standard deviation (sigma(0)) were calculated as 1.31 eV and 0.18, respectively. Moreover, for holes in p-type Si, Richardson constant was found to be 32.09 A cm(-2) K-2 via modified Richardson plot. Using the capacitance-voltage (C - V) and conductance-voltage (G - V) characteristics, series resistance (R-s) and density of interfacial traps (D-it) have been also investigated in detail. A decreasing trend for R-s and D-it profiles with increasing frequency was observed due to the impurities at the CdZnTe/Si interface and interfacial layer between the front metal contact and CdZnTe film.

Subject Keywords

General Materials Science, General Chemistry

URI

https://hdl.handle.net/11511/47961

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

DOI

https://doi.org/10.1007/s00339-020-03772-3

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...
Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films Sankir, Nurdan D.; Sankir, Mehmet; Parlak, Mehmet (Springer Science and Business Media LLC, 2009-05-01) Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80-380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott's parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature ...
Temperature dependence of band gaps in sputtered SnSe thin films Delice, S.; Isik, M.; Gullu, H.H.; Terlemezoğlu, Makbule; Bayrakli Surucu, O.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-08-01) Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band ga...
Numerical study on effects of computational domain length on flow field in standing wave thermoacoustic couple MERGEN, SÜHAN; Yıldırım, Ender; TÜRKOĞLU, HAŞMET (Elsevier BV, 2019-03-01) For the analysis of thermoacoustic (TA) devices, computational methods are commonly used. In the computational studies found in the literature, the flow domain has been modelled differently by different researchers. A common approach in modelling the flow domain is to truncate the computational domain around the stack, instead of modelling the whole resonator to save computational time. However, where to truncate the domain is not clear. In this study, we have investigated how the simulation results are aff...
Optical and Nanomechanical Properties of Ga(2)Se(3)Single Crystals and Thin Films IŞIK, MEHMET; Emir, Cansu; Güllü, Hasan Hüseyin; Hasanlı, Nızamı (Springer Science and Business Media LLC, 2020-10-01) The optical and nanomechanical properties of Ga(2)Se(3)single crystals and thin films were investigated using reflection, transmission, and nanoindentation measurements. The reflection spectrum recorded in the 525- to 1100-nm range was analyzed to get the band gap energy of the crystal structure, and derivative analysis of the spectrum resulted in band gap energy of 1.92 eV which was attributed to indirect transition. The band gap energy of thermally evaporated Ga(2)Se(3)thin film was determined from the an...

Citation Formats

C. D. Balbasi, M. Terlemezoğlu, H. H. Gullu, D. E. Yildiz, and M. Parlak, “Electrical characterization of CdZnTe/Si diode structure,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47961.