Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films

Date

2009-05-01

Author

Sankir, Nurdan D.
Sankir, Mehmet
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

204
views

0
downloads

Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80-380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott's parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature region. Photoconductivity of the PANI-BPS35 composite films having 10, 20, and 40 weight percent conductive filler under various illumination intensities was also studied. Photocurrent of the composite films increased with increasing both polyaniline weight fraction and temperature. Finally, the effect of doping on both electrical conductivity and the photoconductivity of the composite films was investigated.

Subject Keywords

General Materials Science, General Chemistry

URI

https://hdl.handle.net/11511/42554

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

DOI

https://doi.org/10.1007/s00339-008-4956-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals KARABULUT, ORHAN; Parlak, Mehmet; Yılmaz, Koray Kamil; Hasanlı, Nızamı (Wiley, 2005-03-01) The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10(-9) (Omega-cm)(-1), 48 cm(2)V(-1) s(-1) and similar to 10(9) cm(-3), respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single ...
Electrical, optical and photoconductive properties of poly(dibenzo-18-crown-6) Qasrawi, AF; Cihaner, A; Önal, Ahmet Muhtar (Wiley, 2004-01-01) To investigate the energy levels, absorption bands, band gap, dominant transport mechanisms, recombination mechanisms and the free carrier life time behavior of poly-dibenzo-18-crown-6, poly-DB18C6, films, the dark electrical conductivity in the temperature range of 200-550 K, the absorbance and photocurrent spectra, the photocurrent -illumination intensity and time dependence at 300 K were studied. The dark electrical conductivity measurements revealed the existence of three energy levels located at 0.93, ...
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01) The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Temperature dependence of band gaps in sputtered SnSe thin films Delice, S.; Isik, M.; Gullu, H.H.; Terlemezoğlu, Makbule; Bayrakli Surucu, O.; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2019-08-01) Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band ga...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01) Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...

Citation Formats

N. D. Sankir, M. Sankir, and M. Parlak, “Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 589–594, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42554.