Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals

Date

2014-11-01

Author

Guler, I.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

127
views

0
downloads

The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported.

Subject Keywords

Layered crystals, Raman line widths, Crystal disorder

URI

https://hdl.handle.net/11511/48165

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2014.01.131

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25 <= x <= 1): Compositional dependence of the mode frequencies and line widths Güler, Işıkhan; Hasanlı, Nızamı (2011-09-15) The Raman spectra of TlInS2xSe2(1-x) layered mixed crystals were studied for a wide composition range (0.25 <= x <= 1) in the frequency region 10-360 cm(-1) at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported.
Compositional Dependence of Optical Modes Frequencies in T1Ga(x)In(1-x)S(2) Layered Mixed Crystals (0 <= x <= 1) Isik, M.; Hasanlı, Nızamı; Korkmaz, F. (2014-09-01) The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm(-1), respectively. The bands observed at room temperature in IR transmittance spectra of TlGaxIn1-xS2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGaxIn1-xS2 mixed crystals were also established. The str...
Compositional dependence of refractive index and oscillator parameters in T1GaS(2x)Se(2(1-x)) layered mixed crystals (0 <= x <= 1) Hasanlı, Nızamı (2012-09-14) Optical characterization of TIGaS2xSe2(1-x) mixed crystals have been carried out at room temperature using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, di...
Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study Yuksek, N.s.; Hasanlı, Nızamı; Ozkan, H.; Aydinli, A. (2004-08-01) The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that th...
Temperature-dependent absorption edge and photoconductivity of Tl2In2S3Se layered single crystals Güler, Işıkhan; Ligonzo, T.; Hasanlı, Nızamı (2013-02-15) Temperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 x 10(-4) eV/K from absorption measurements in the temperature range of 10-300 K in the wavelength range of 520-1100 nm and -5.0 x 10(-4) eV/K from PC measurements in the temperature range of 132-291 K in the wavelength range of 443-620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivi...

Citation Formats

I. Guler and N. Hasanlı, “Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals,” APPLIED SURFACE SCIENCE, pp. 113–115, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48165.