Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals

Date

2014-11-01

Author

Guler, I.
Hasanlı, Nızamı

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The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported.

Subject Keywords

Layered crystals, Raman line widths, Crystal disorder

URI

https://hdl.handle.net/11511/48165

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2014.01.131

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Department of Physics, Article

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Raman scattering in TlInS2xSe2(1-x) layered mixed crystals (0.25 <= x <= 1): Compositional dependence of the mode frequencies and line widths Güler, Işıkhan; Hasanlı, Nızamı (2011-09-15) The Raman spectra of TlInS2xSe2(1-x) layered mixed crystals were studied for a wide composition range (0.25 <= x <= 1) in the frequency region 10-360 cm(-1) at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported.
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Citation Formats

I. Guler and N. Hasanlı, “Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals,” APPLIED SURFACE SCIENCE, pp. 113–115, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48165.