Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study

Date

2004-08-01

Author

Yuksek, N.s.
Hasanlı, Nızamı
Ozkan, H.
Aydinli, A.

Metadata

Show full item record

Item Usage Stats

163
views

0
downloads

The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that the interlayer Raman mode at 42.6 cm-1 shifts toward high frequency as the temperature is raised from 16 to 300 K.

Subject Keywords

Anharmonicity, Layered crystals, Phonon-phonon coupling, TIGaS2

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=4544352210&origin=inward
https://hdl.handle.net/11511/76600

Journal

Journal of the Korean Physical Society

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature dependence of Raman-active modes of TlGaS2 layered crystals: An anharmonicity study Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Aydinli, A (2004-08-01) The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TlGaS2 layered crystals was measured in the frequency range of 10 - 400 cm(-1). The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that ...
Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals Yuksek, NS; Hasanlı, Nızamı (2005-03-01) Raman spectra of TlGaSe2 crystal at different temperatures are discussed. The temperature dependence of frequency shifts and linewidths of the Raman peaks in the frequency region of 10-320 cm(-1) have been measured in the range from 50 to 320 K. The analysis of the experimental data showed that the temperature dependencies of phonon frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupl...
Compositional dependence of Raman-active mode frequencies and line widths in TlInS2xSe2(1-x) mixed crystals Guler, I.; Hasanlı, Nızamı (2014-11-01) The Raman spectra of mixed crystals TlInS2xSe2(1-x) have been investigated in the composition range of 0.25 <= x <= 0.75 and in the high-frequency region of 250-350 cm(-1) at room temperature. It was observed that Raman-active mode frequencies decrease as the selenium atoms content increases in the mixed crystals. The effect of crystal disorder on the line broadening of three high-frequency modes is reported.
Temperature-dependent absorption edge and photoconductivity of Tl2In2S3Se layered single crystals Güler, Işıkhan; Ligonzo, T.; Hasanlı, Nızamı (2013-02-15) Temperature variation of indirect band gap of Tl2In2S3Se layered single crystals were obtained by means of absorption and photoconductivity measurements. The temperature coefficient of -7.1 x 10(-4) eV/K from absorption measurements in the temperature range of 10-300 K in the wavelength range of 520-1100 nm and -5.0 x 10(-4) eV/K from PC measurements in the temperature range of 132-291 K in the wavelength range of 443-620 nm upon supplying voltage V = 80 V were obtained. From the analysis of dark conductivi...
Temperature dependence of the first-order Raman scattering in GaS layered crystals Hasanlı, Nızamı; Ozkan, H; Kocabas, C (2000-01-01) The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm(-1). We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions...

Citation Formats

N. s. Yuksek, N. Hasanlı, H. Ozkan, and A. Aydinli, “Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study,” Journal of the Korean Physical Society, pp. 501–506, 2004, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=4544352210&origin=inward.