Electron Transport Properties of Ga0.51In0.49P for Device Applications

Date

1994-01-01

Author

Beşikci, Cengiz

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We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.49P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-xAs (x = 0.2, 0.3). Our Monte Carlo data show that transport properties of Ga0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account. this material is a good choice to replace AlxGa1-xAs (x greater-than-or-equal-to 0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures.

Subject Keywords

Molecular-Beam Epitaxy, Chemical Vapor-Deposition, Conduction-Band, Gaas, Gas, Heterostructure, Mobility, Ingap, Performance, Ternary

URI

https://hdl.handle.net/11511/48263

Journal

IEEE Transactions on Electron Devices

DOI

https://doi.org/10.1109/16.293323

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

C. Beşikci, “Electron Transport Properties of Ga0.51In0.49P for Device Applications,” IEEE Transactions on Electron Devices, pp. 1066–1069, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48263.