DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

Date

1994-05-10

Author

Katırcıoğlu, Şenay

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

124
views

0
downloads

The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.

Subject Keywords

Super-Lattices, Heterostructures, Energy

URI

https://hdl.handle.net/11511/48890

Journal

SURFACE SCIENCE

DOI

https://doi.org/10.1016/0039-6028(94)90473-1

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Short-range correlations in a one-dimensional electron gas Tas, M; Tomak, Mehmet (American Physical Society (APS), 2003-06-15) We use the Singwi-Sjolander-Tosi-Land (SSTL) approximation to investigate the short-range correlations in a one-dimensional electron gas. We find out that the SSTL approximation satisfies the compressibility sum rule somewhat better than the more widely used Singwi-Tosi-Land-Sjolander approximation in the case of a one-dimensional electron gas.
Quantum chemical study on 5-nitro-2,4-dihydro-3H-1,2,4-triazol-3-one (NTO) and some of its constitutional isomers Türker, Burhan Lemi; Atalar, Taner (Elsevier BV, 2006-10-11) Presently, certain isomeric compounds of NTO and their tautomers have been investigated by performing density functional theory (DFT) calculations at B3LYP/6-31G(d,p) and ROB3P86/6-311G(d,p) levels and also ab initio calculations at RHF/6-311G(d,p) level. The optimized geometries, vibrational frequencies, electronic structures and some thermodynamical values for the presently considered NTO isomers have been obtained in their ground states. Also, detonation performances were evaluated by the Kammlet-Jacobs ...
Optical transitions in InSe/GaSe superlattices Katırcıoğlu, Şenay; Allahverdi, K (1998-06-22) We have performed self-consistent-field (SCF) calculations of the electronic structure of InSe/GaSe superlattices with square-well potential profile within the effective-mass theory. We have calculated the optical transition matrix elements involving transitions from the hole states to electron states, and we have also computed the oscillates strength matrix elements for the transitions among the electron states. (C) 1998 Elsevier Science S.A. All rights reserved.
Self-consistent calculation of semiconductor heterojunctions using quantum genetic algorithm Sahin, M; Tomak, Mehmet (2002-10-20) In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs/AlxGa1-xAs heterojunctions. For this purpose, Schrodinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). In this way, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also...
Temperature dependence of the Raman frequencies and bandwidths close to phase transitions in ammonium halides Yurtseven, Hasan Hamit (2001-09-01) In this study, we give the temperature dependence of our observed frequencies and bandwidths for the Raman optical modes in the ammonium halides close to the phase transitions of the first order (NH4 Br), tricritical (NH4Cl) and second order (NH4Cl). Using the predictions of an [sing pseudospin-phonon coupled model, which considers interactions between two spin and two phonons, our observed Raman data have been interpreted qualitatively. Our results show that an Ising model considered here can explain the o...

Citation Formats

Ş. Katırcıoğlu, “DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE,” SURFACE SCIENCE, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48890.