DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

Date

1994-05-10

Author

Katırcıoğlu, Şenay
ERKOC, S

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The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.

Subject Keywords

Super-Lattices, Heterostructures, Energy

URI

https://hdl.handle.net/11511/48890

Journal

SURFACE SCIENCE

DOI

https://doi.org/10.1016/0039-6028(94)90473-1

Collections

Department of Physics, Article

Citation Formats

Ş. Katırcıoğlu and S. ERKOC, “DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE,” SURFACE SCIENCE, vol. 311, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48890.