DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

1994-05-10
The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.
SURFACE SCIENCE

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Citation Formats
Ş. Katırcıoğlu, “DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE,” SURFACE SCIENCE, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48890.