DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE

1994-05-10
The electronic structure of a uniformly and modulation-doped GaAs/Ga0.75Al0.25As superlattice has been investigated by a self-consistent field calculation within the effective mass approximation for three different doping concentrations. It has been found that the resonance state energies show a strong dependence on the doping level and the doping distribution type of the superlattice.

Citation Formats
Ş. Katırcıoğlu and S. ERKOC, “DEPENDENCE OF RESONANCE STATES ON DOPING LEVEL AND DOPING DISTRIBUTION TYPE IN GAAS GA0.75AL0.25AS SUPERLATTICE,” SURFACE SCIENCE, vol. 311, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48890.